KDS3512 KEXIN | Alldatasheet
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4 . 0A ,8 0V .RDS(ON) = 70m @V GS =1 0V RDS(ON) = 80m @V GS =6V Low gate charge (13 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage V DSS 80 V Gate to Source Voltage V GS 20 V Drain Current Continuous (Note 1a) 4 A Drain Current Pulsed 30 A Power dissipation (Note 1a) 2.5 Power dissipation (Note 1b) 1.2 Power dissipation (Note 1c) 1 Operating and Storage Temperature T J,T STG - 5 5t o1 7 5 Thermal Resistance Junction to Ambient (Note 1a) R JA 50 /W Thermal Resistance Junction to Case (Note 1) R JC 25 /W ID PD W
www.kexin.com.cn2 SMD Type ICSMD Type IC Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Single Pulse Drain-Source Avalanche Energy W DSS VDD =4 0V ,ID =4 . 0 A( N o t2 ) 9 0 m J Maximum Drain-Source Avalanche Current I AR ( Not 2) 4.0 A Drain-Source Breakdown Voltage B VDSS VGS =0V ,I D =2 5 0 A 80 V Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25 80 mV/ Zero Gate Voltage Drain Current I DSS VDS =6 4V ,VGS =0V 1 A Gate-Body Leakage, Forward I GSSF VGS =2 0V ,VDS = 0 V 100 nA Gate-Body Leakage, Reverse I GSSR VGS =- 2 0V ,VDS = 0 V -100 nA Gate Threshold Voltage V GS(th) VDS =V GS,I D =2 5 0 A 22 . 44 V Gate Threshold Voltage Temperature Coefficient ID = 250 A, Referenced to 25 -6 mV/ VGS =1 0V ,ID =4 . 0A 5 0 7 0 VGS =6V ,I D =3 . 7A 5 5 8 0 VGS =1 0V ,ID =4.0 A,TJ = 125 91 135 On-State Drain Current I D(on) VGS =1 0V ,VDS =5V 2 0 A Forward Transconductance g FS VDS =1 0 V ,ID =4 . 0A 1 4 S Input Capacitance C iss 634 pF Output Capacitance C oss 58 pF Reverse Transfer Capacitance C rss 28 pF Turn-On Delay Time t d(on) 71 4 n s Turn-On Rise Time tr 3 6 ns Turn-Off Delay Time t d(off) 24 38 ns Turn-Off Fall Time t f 48 n s Total Gate Charge Q g 13 18 nC Gate-Source Charge Q gs 2.4 nC Gate-Drain Charge Q gd 2.8 nC Maximum Continuous Drain-Source Diode Forward Current IS 2.1 A Drain-Source Diode Forward Voltage V SD VGS =0V ,I S = 2.1 A (Not 2) 0.8 1.2 V VDS =4 0V ,ID =4 . 0A , VGS =1 0V (Note 2) mRDS(on)Static Drain-Source On-Resistance VDD =4 0V ,ID =1A , VGS =1 0V ,RGEN =6 (Note 2) VDS =4 0V ,VGS =0V , f=1 . 0M H z KDS3512