KDS2572 KEXIN | Alldatasheet
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RDS(ON) = 0.040 (Typ.), VGS = 10V Qg(TOT) = 29nC (Typ.), VGS = 10V Low QRR Body Diode Maximized efficiency at high frequencies UIS Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage V DSS 150 V Gate to Source Voltage V GS 20 V Drain Current Continuous (TC =2 5 )* 1 4.9 A Drain Current Continuous (TC = 100 )* 1 3.1 A Power dissipation 2.5 W Derate above 25 20 mW/ Operating and Storage Temperature T J,T STG - 5 5t o1 5 0 Thermal Resistance Junction to Case R JC 25 /W Thermal Resistance Junction to Case at 10 seconds *2 R JA 50 /W Thermal Resistance Junction to Case at steady state *2 R JA 85 /W *1 VGS = 10V, RqJA =5 0 /W *2 R JA is measured with 1.0in2 copper on FR-4 board PD ID N-Channel UltraFET Trench MOSFET KDS2572
www.kexin.com.cn2 SMD Type ICSMD Type IC Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain to Source Breakdown Voltage B VDSS ID =2 5 0 m A ,VGS = 0V 150 V VDS = 120V,VGS =0 V 1 VDS = 120V,VGS =0 V, TC = 150 Gate to Source Leakage Current I GSS VGS = 20V 100 nA Gate to Source Threshold Voltage V GS(TH) VGS =V DS,I D =2 5 0 m A 2 4 V D r a i nt oS o u r c eO nR e s i s t a n c e rDS(ON) ID =4 . 9 A ,VGS = 10V 0.040 0.047 D r a i nt oS o u r c eO nR e s i s t a n c e rDS(ON) ID =4 . 9 A ,VGS = 6V 0.044 0.053 Input Capacitance C ISS 2050 pF Output Capacitance C OSS 220 pF Reverse Transfer Capacitance C RSS 48 pF Total Gate Charge at 10V Q g(TOT) VGS=0V to 10V,VDD=75V,ID=4.9A,Ig=1.0mA 29 38 nC Threshold Gate Charge Q g(TH) VGS=0V to 2V,VDD=75V,ID=4.9A,Ig=1.0mA 4 6 nC Gate to Source Gate Charge Q gs 8n C Gate to Drain "Miller" Charge Q gd 6n C Gate Charge Threshold to Plateau Q gs2 4n C Turn-On Time t ON 27 ns Turn-On Delay Time t d(ON) 14 ns Rise Time t r 4n s Turn-Off Delay Time t d(OFF) 44 ns Fall Time t f 22 ns Turn-Off Time t OFF 100 ns ISD = 4.9A 1.25 V ISD = 3.1A 1.0 V Reverse Recovery Time t rr ISD =4 . 9 A ,dISD/dt =100A/ s 72 ns Reverse Recovered Charge Q RR ISD =4 . 9 ,dISD/dt =100A/ s 158 nC VDD = 75V, ID =4 . 9 A , VGS = 10V, RG =1 0 A Source to Drain Diode Voltage V SD IDSSZero Gate Voltage Drain Current VDS = 25V, VGS =0 V , f=1 M H z VDD = 75V,ID =4 . 9 A , Ig =1 . 0 m A KDS2572