KDS160F_15 KEC | Alldatasheet

Document overview

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Technical content

  1. 1. 3 1/2 SEMICONDUCTOR TECHNICAL DATA KDS160F SILICON EPITAXIAL PLANAR DIODE Revision No : 1 ULTRA HIGH SPEED SWITCHING APPLICATION.

FEATURES

hSmall package : TFSC. hLow forward voltage. hFast reverse recovery time. hSmall total capacitance. MAXIMUM RATING (Ta=25) ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 mA Average Forward Current IO 100 mA Surge Current (10mS) IFSM 2 A Power Dissipation PD * 100 mW Junction Temperature Tj 150  Storage Temperature Range Tstg -55q150  CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF(1) IF=1mA - 0.60 - VVF(2) IF=10mA - 0.72 - VF(3) IF=100mA - 0.90 1.20 Reverse Current IR VR=80V - - 0.5 ǺA Total Capacitance CT VR=0V, f=1MHz - 0.9 3.0 pF Reverse Recovery Time trr IF=10mA - 1.6 4.0 nS * : Mounted on a glass epoxy circuit board of 20ƒ20mm, pad dimension of 4ƒ4mm.

  1. 1. 3 2/2 KDS160F Revision No : 1