KDS160E_03 KEC | Alldatasheet
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Technical content
- 11. 20 1/2 SEMICONDUCTOR TECHNICAL DATA KDS160E SILICON EPITAXIAL PLANAR DIODE Revision No : 4 ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package : ESC. Low Forward Voltage. Fast Reverse Recovery Time. Small Total capacitance. MAXIMUM RATING (Ta=25 ESC DIM MILLIMETERS A B C D E 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 CATHODE MARK D C B A E 1. ANODE 2. CATHODE F 0.13 0.05F ELECTRICAL CHARACTERISTICS (Ta=25 Type NameMarking FU CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 mA Average Forward Current IO 100 mA Surge Current (10mS) IFSM 2 A Power Dissipation PD* 150 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF(1) IF=1mA - 0.60 - VVF(2) IF=10mA - 0.72 - VF(3) IF=100mA - 0.90 1.20 Reverse Current IR VR=80V - - 0.5 A Total Capacitance CT VR=0V, f=1MHz - 0.9 3.0 pF Reverse Recovery Time trr IF=10mA - 1.6 4.0 nS * : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm.
- 11. 20 2/2 KDS160E Revision No : 4 10.1 REVERSE VOLTAGE V (R)R RTC - V REVERSE CURRENT I (µA)R REVERSE VOLTAGE V (V)R TOTAL CAPACITANCE C (pF) I - VI - V FFORWARD VOLTAGE V (V) F FORWARD CURRENT I (mA) FF
1 Ta=100 CTa=25 C
Ta=-25 C RR 20 40 60 80 Ta=100 C Ta=75 C Ta=50 C Ta=25 C T 0.4 0.8 1.2 1.6 2.0 3 10 30 100 f=1MHz Ta=25 C t - I FFORWARD CURRENT I (mA) 0.1 0.5 rrREVERSE RECOVERY TIME t (ns) rr F 0.3 1 3 10 30 100 100 Ta=25 C Fig. 1 0.3 Fig. 1. REVERSE RECOVERY TIME(t ) TEST CIRCUIT rr 50Ω 2kΩ E 50Ω INPUT WAVEFORM INPUT 0.01µF DUT OUTPUT SAMPLING OSCILLOSCOPE (R =50Ω ) IN WAVEFORM 0.1 IR IR FI =10mA rrt PULSE GENERATOR (R =50Ω )OUT 50ns -6V