KDS142E KEC | Alldatasheet

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Technical content

  1. 1. 27 1/2 SEMICONDUCTOR TECHNICAL DATA KDS142E SILICON EPITAXIAL PLANAR DIODE Revision No : 0 ULTRA HIGH SPEED SWITCHING APPLICATION.

FEATURES

Small Package : ESM. Low Forward Voltage : VF=1.0V (Max.). MAXIMUM RATING (Ta=25 DIM MILLIMETERS A B D E ESM 1.60 0.10 0.85 0.10 0.70 0.10 0.27+0.10/-0.05 1.60 0.10 1.00 0.10 0.50 0.13 0.05 C G H J 1 3 E B D A G H C J 1. CATHODE 1 2. ANODE 2 3. ANODE 1 / CATHODE 2 ELECTRICAL CHARACTERISTICS (Ta=25 Marking DS CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 20 V Reverse Voltage VR 20 V Maximum (Peak) Forward Current IFM 200 * mA Average Forward Current IO 100 * mA Surge Current (1 s) IFSM 300 * mA Power Dissipation PD 100 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Unit Rating. Total Rating=Unit Rating x 0.7 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IF=10mA - - 1.0 V Reverse Current IR VR=15V - - 0.1 A

  1. 1. 27 2/2 KDS142E Revision No : 0 30.5 REVERSE VOLTAGE V (V)R RTC - V FORWARD CURRENT I (mA)F 0.01 FORWARD VOLTAGE V (V)F TOTAL CAPACITANCE C (pF) 0.5 I - VFF 0.1 100 D1+D2D1 T 10 30 f=1MHz (D1+D2) (D1) (D2) Ta=125 CTa=75 CTa=25 CTa=-25 CTa=125 C Ta=75 CTa=25 CTa=-25 C REVERSE CURRENT I (nA)R 0.01 REVERSE VOLTAGE V (V)R I - VRR 51 0 1 5 0.1 100 Ta=125 C Ta=125 C Ta=100 C Ta=100 C Ta=75 C Ta=75 C FORWARD CURRENT I (mA)F 0.01 FORWARD VOLTAGE V (V)F I - VFF 0.4 0.8 1.2 1.6 0.1 100 Ta=125 CTa=7 5 C Ta=25 CTa=-25 C