KDS135S_15 KEC | Alldatasheet
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Technical content
- 6. 11 1/2 SEMICONDUCTOR TECHNICAL DATA KDS135S SILICON EPITAXIAL PLANAR DIODE Revision No : 0 High Voltage Switching.
FEATURES
hHigh Reliability. hSmall surface mounting type (SOT-23). MAXIMUM RATING (Ta=25) DIM MILLIMETERS SOT-23 A B C D E 2.93 0.20 1.30+0.20/-0.15 0.40+0.15/-0.05 2.40+0.30/-0.20 G 1.90 H J K L M N 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 Q 0.1 MAX
0.20 MIN
1.00+0.20/-0.10 M J K E 2 3 H G A N C B D 1.30 MAX LL PP Q 1. NC 2. ANODE 3. CATHODE 2 1 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 300 V Reverse Voltage VR 250 V Maximum (Peak) Forward Current IFM 300 mA Average Forward Current IO 100 mA Surge Current (10mS) IFSM 2 A Power Dissipation PD 150 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55q150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IF=100mA - 1.0 1.2 V Reverse Current IR(1) VR=250V - 0.04 0.2 ǺA IR(2) VR=300V - - 100 Total Capacitance CT VR=0V, f=1MHz - 1.35 3 pF Reverse Recovery Time trr IR=30mA, IF=30mA - 30 100 nS Type Name Marking Lot No. J A
- 6. 11 2/2Revision No : 0 KDS135S