KDS122 KEC | Alldatasheet
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Technical content
KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA | SILICON EPITAXIAL PLANAR DIODE, ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
+ Small Package : USM. — + Low Forward Voltage : Vp=0.9V(Typ.). 4-24 + Fast Reverse Recovery Time : ty=1.6ns(Typ.). yf | op + Small Total Capacitance Cr=0.9pF(Typ.). ope ees HH | MAXIMUM RATINGS (Ta=25'0) = eimom CHARACTERISTIC SYMBOL } RATING | UNIT cman ¢ {oes J [ac [asso | 2. aN00E 2 A Maximum (Peak) Forward Current 300 « Sov ene: = [a] Average Forward Current 100 * USM Surge Current (10ms) Tsu ae] A mn a Note : *Unit Rating. Total Rating=Unit Rating x 1.5 'e 2) Ly Ly o o ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN MAX. | UNIT 1999. 2. 8 Revision No : 0 KEC 12
rs— Ip Cr - Vr oe ss ee f=100MHz f=1MHz Fy & a Pe LT a 1 a SN | | ist 1 a | a a a a | 2 re | % po & poo 2 os, —_| eS ° os, ee ee ee ee ee #1 Tt es ee 1 3 5 10 20 1 3 5 10 20 FORWARD CURRENT Ip (mA) REVERSE VOLTAGE Vp (V) Ip — Vr = FR] teczse | So SSS ss ee ee eo" Ld Lf 2 ee ee | ery eee SEREEEEe BY EE = |
2 LLL TT tt tty
FORWARD VOLTAGE Vp (V) 1999. 2. 8 Revision No : 0 KEC 22