KDS120_08 KEC | Alldatasheet

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Technical content

2008.9. 8 1/2 SEMICONDUCTOR TECHNICAL DATA KDS120 SILICON EPITAXIAL TYPE DIODE Revision No : 4 ULTRA HIGH SPEED SWITCHING APPLICATION.

FEATURES

¡¤Small Package : USM. ¡¤Low Forward Voltage : VF=0.92V (Typ.). ¡¤Fast Reverse Recovery Time : trr=1.6ns(Typ.). ¡¤Small Total Capacitance : CT=2.2pF (Typ.). MAXIMUM RATING (Ta=25¡É) DIM MILLIMETERS A B D E 1. CATHODE 1 2. CATHODE 2 3. ANODE USM 2.00 0.20 1.25 0.15 0.90 0.10 0.3+0.10/-0.05 2.10 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 C G H J K L K 1 3 E B D A J G C L H MM N N M 0.42 0.10 N 0.10 MIN 2 1 ELECTRICAL CHARACTERISTICS (Ta=25¡É) Type Name Marking Lot No. CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 * mA Average Forward Current IO 100 * mA Surge Current (10ms) IFSM 2 * A Power Dissipation PD 100 mW Junction Temperature Tj 150 ¡É Storage Temperature Range Tstg -55¡­150 ¡É CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF(1) IF=1mA - 0.61 - VVF(2) IF=10mA - 0.74 - VF(3) IF=100mA - 0.92 1.20 Reverse Current IR VR=80V - - 0.5 ¥ìA Total Capacitance CT VR=0, f=1MHz - 2.2 4.0 pF Reverse Recovery Time trr IF=10mA - 1.6 4.0 nS Note : * Unit Rating. Total Rating=Unit Rating x 1.5

  1. 9. 8 2/2 KDS120 Revision No : 4 10.2 REVERSE VOLTAGE V (V)R RTC - V REVERSE CURRENT I (µA)R REVERSE VOLTAGE V (V)R TOTAL CAPACITANCE C (pF) I - VI - V FFORWARD VOLTAGE V (V) F FORWARD CURRENT I (mA) FF

1 Ta=100 CTa=25 CTa=-25 C

Ta=100 C Ta=75 C Ta=50 C Ta=25 C T 0.5 1.0 1.5 2.0 2.5 31 0 3 0 1 00 200 f=1MHz Ta=25 C t - I FFORWARD CURRENT I (mA) 0.1 0.5 rrREVERSE RECOVERY TIME t (ns) rr F 0.3 1 3 10 30 100 100 Ta=25 C Fig. 1 Fig. 1. REVERSE RECOVERY TIME(t ) TEST CIRCUIT rr 50Ω 2kΩ E 50Ω INPUT WAVEFORM INPUT 0.01µF DUT OUTPUT SAMPLING OSCILLOSCOPE (R =50Ω )IN WAVEFORM 0.1 IR IR FI =10mA rrt PULSE GENERATOR (R =50Ω )OUT 50ns -6V