KDS115_08 KEC | Alldatasheet
Document overview
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Technical content
- 9. 8 1/2 SEMICONDUCTOR TECHNICAL DATA KDS115 SILICON EPITAXIAL PLANAR DIODE Revision No : 2 VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES
¡¤Small Package. ¡¤Small Total Capacitance : CT=1.2pF(Max.). ¡¤Low Series Resistance : rS=0.6§Ù(Typ.). MAXIMUM RATING (Ta=25¡É) DIM MILLIMETERS A B D E 1. CATHODE 1 2. ANODE 2 3. ANODE1/ CATHODE 2 USM 2.00 0.20 1.25 0.15 0.90 0.10 0.3+0.10/-0.05 2.10 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 C G H J K L K 1 3 E B D A J G C L H MM N N M 0.42 0.10 N 0.10 MIN 2 1 ELECTRICAL CHARACTERISTICS (Ta=25¡É) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 30 V Forward Current IF 50 mA Junction Temperature Tj 125 ¡É Storage Temperature Range Tstg -55¡125 ¡É CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IF=2mA - - 0.85 V Reverse Current IR VR=15V - - 0.1 ¥ìA Reverse Voltage VR IR=1¥ìA 30 - - V Total Capacitance CT VR=6V, f=1MHz - 0.8 1.2 pF Series Resistance rs IF=2mA, f=100MHz - 0.6 0.9 §Ù Type Name Marking Lot No.
- 9. 8 2/2 KDS115 Revision No : 2 FORWARD VOLTAGE V (V) I - VF FORWARD CURRENT I (A) F TOTAL CAPACITANCE C (pF)T REVERSE VOLTAGE V (V)R RTC - V FORWARD CURRENT I (mA) 0.3 SERIES RESISTANCE r (Ω ) s 31 0 2 0 r - Is F F 0.5 Ta=25 C f=100MHz 0.3 0.5 35 10 20 f=1MHz Ta=25 C F F Ta=25 C