KDR8702H KEXIN | Alldatasheet

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N-Ch R DS(ON) = 54m @V GS =2 . 5V 3 . 6A ,2 0V RDS(ON) =3 8 m @V GS =4.5V P-Ch R DS(ON) = 110 m @V G S= -2 . 5V -2.6 A, -20 V RDS(ON) =8 0m @V GS =-4.5V Fast switching speed High performance trench technology for extremely low RDS(ON) Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P- Channel Unit Drain to Source Voltage V DSS 20 -20 V Gate to Source Voltage V GS 12 8 V Drain Current Continuous (Note 1a) 3.6 -2.6 A Drain Current Pulsed 15 -10 A Power Dissipation for Single Operation (Note 1a) P D W Operating and Storage Temperature T J,T STG Thermal Resistance Junction to Ambient (Note 1a) R JA /W Thermal Resistance Junction to Ambient (Note 1b) R JA /W Thermal Resistance Junction to Case (Note 1) R JC /W ID 0.8 - 5 5t o1 5 0 146

www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit VGS =0V ,I D =2 5 0 A N-Ch 20 VGS =0V ,I D =- 2 5 0A P-Ch -20 ID = 250 A, Referenced to 25 N-Ch 36 ID =- 2 5 0A, Referenced to 25 P-Ch -15 VDS = 16V, VGS =0V N - C h 1 VDS =- 1 6V ,VGS =0V P - C h - 1 VGS = 12 V, VDS =0V N-Ch 100 VGS = 8V ,VDS =0V P-Ch 100 VDS =V GS,I D =2 5 0 A N-Ch 0.6 0.8 1.5 VDS =V GS,I D =- 2 5 0A P-Ch -0.4 -0.7 -1.6 ID = 250 A, Referenced to 25 N-Ch -2 ID =- 2 5 0A, Referenced to 25 P-Ch 2.5 VGS =4 . 5V ,ID =3.6A 31 38 VGS =2 . 5V ,ID =3 . 1A 4 2 5 4 VGS =4 . 5V ,ID =3.6 A,TJ = 125 41 58 VGS =- 4 . 5V ,ID =-2.6 A 66 80 VGS =- 2 . 5V ,ID =-2.2 A 85 110 VGS =- 4 . 5V ,ID =-2.6 A,TJ = 125 83 108 VGS =4 . 5V ,VDS =5 V N - C h 1 0 VGS =- 4 . 5V ,VDS =- 5 V P - C h - 1 0 VDS =V GS,I D =2 5 0 A N-Ch 15 VDS =V GS,I D =- 2 5 0A P-Ch 9 N-Ch 1 P-Ch 4.8 N-Channel N-Ch 650 VDS =1 0V ,VGS = 0 V,f = 1.0 MHz P-Ch 607 N-Ch 170 P-Channel P-Ch 165 VDS =- 1 0V ,VGS = 0 V,f = 1.0 MHz N-Ch 80 P-Ch 60 N-Channel N-Ch 8 16 VDD =1 0V ,ID = 1 A, P-Ch 12 22 VGS =4 . 5V ,RGEN =6 N-Ch 9 18 P-Ch 11 20 P-Channel N-Ch 16 29 VDD =- 1 0V ,ID =- 1A , P - C h 2 6 4 2 VGS =- 4 . 5V ,RGEN =6 N-Ch 7 14 P-Ch 8 16 VGS(th)Gate Threshold Voltage N-Ch BVDSSDrain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate-Body Leakage I GSS IDSSZero Gate Voltage Drain Current Gate Threshold Voltage Temperature Coefficient RDS(on)Static Drain-Source On-Resistance ID(on)On-State Drain Current RDS(on)Static Drain-Source On-Resistance gFSForward Transconductance RGGate Resistance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance td(on)Turn-On Delay Time trTurn-On Rise Time td(off)Turn-Off Delay Time tfTurn-Off Fall Time P-Ch V mV/ A nA V mV/ m Testconditons ns ns pF pF ns ns A S V GS =1 5m V ,f=1 . 0M H z pF KDR8702H

www.kexin.com.cn 3 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit N-Channel N-Ch 7 10 VDS =10V,ID=3.6A,VGS=4.5V P-Ch 6 8 (Note 2) N-Ch 1.3 P-Channel P-Ch 1.2 VDS=-10V,ID=-2.6A,VGS=-4.5V N-Ch 2.2 (Note 2) P-Ch 1.6 N-Ch 0.7 P-Ch -0.7 VGS =0V ,I S = 0.7A (Not 2) N-Ch 0.7 1.2 VGS =0V ,I S = -0.7A (Not 2) P-Ch -0.7 -1.2 N-Channel N-Ch 16 IF =3.6A,diF/dt = 100 A/ s P-Ch 22 N-Ch 0.6 P-Channel P-Ch 0.7 IF =-2.6A,diF/dt =1 0 0A /s N-Ch 5 P-Ch 8 QgTotal Gate Charge Gate-Source Charge Q gs QgdGate-Drain Charge IS Maximum Continuous Drain-Source Diode Forward Current VSDDrain-Source Diode Forward Voltage trrDiode Reverse Recovery Time Maximum Reverse Recovery Current Irm QrrDiode Reverse Recovery Charge Testconditons nC nC nS A nC A V nC KDR8702H