KDR368E KEC | Alldatasheet
Document overview
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Technical content
- 2. 25 1/2 SEMICONDUCTOR TECHNICAL DATA KDR368E SCHOTTKY BARRIER TYPE DIODE Revision No : 1 LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : VF(2)=0.23V (Typ.) Small Package : ESC. MAXIMUM RATING (Ta=25 ESC DIM MILLIMETERS A B C D E 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 CATHODE MARK D C B A E 1. ANODE 2. CATHODE F 0.13 0.05F ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 20 V Reverse Voltage VR 20 V Maximum (Peak) Forward Current IFM 200 mA Average Forward Current IO 100 mA Surge Current (10ms) IFSM 1 A Power Dissipation PD 150* mW Junction Temperature Tj 125 Storage Temperature Range Tstg -55 125 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF(1) IF=1mA - 0.18 - VVF(2) IF=5mA - 0.23 0.30 VF(3) IF=100mA - 0.35 0.50 Reverse Current IR VR=10V - - 20 A Total Capacitance CT VR=10V, f=1MHz - 20 40 pF * : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm. Type NameMarking
- 2. 25 2/2 KDR368E Revision No : 1 FORWARD CURRENT I (A)F 10µ FORWARD VOLTAGE V (V)F I - V F F 100µ 10m 100m POWER DISSIPATION P (mW) AMBIENT TEMPERATURE Ta ( C) P - Ta Ta=100 CTa=75 CTa=50 C Ta=25 CTa=0 C Ta=-25 C REVERSE VOLTAGE V (R)R RTC - V CAPACITANCE C (pF)T 0.30.130m10m 1 3 10 20 f=1MHz Ta=25 C 25 50 75 100 125 150 120 160 200 240 Mounted on a glass epoxy circuit board of 20\
20mm, pad dimension 4\4mm. REVERSE CURRENT I (A)R REVERSE VOLTAGE V (V)R I - V RR 51 0 Ta=25 C 15 20 25 Ta=75 C Ta=125 C