KDP629UL KEC | Alldatasheet

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Technical content

  1. 12. 8 1/2 SEMICONDUCTOR TECHNICAL DATA KDP629UL SILICON EPITAXIAL PIN TYPE DIODE Revision No : 0 For antenna switches in mobile applications.

FEATURES

Array type (4 Diode in one package) Low Capacitance Low Series resistance MAXIMUM RATING (Ta=25 ULP-12 MILLIMETERSDIM G F TOP VIEW SIDE VIEW BOTTOM VIEW A B C G D E F A B E C 12 7 1 6D 2.50 0.05+_ 1.20 0.05+_ 0.20 0.05+_ 0.40 0.05+_ 0.25 0.05+_ 0.45 0.05+_ Max 0.5 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 30 V Forward Current IF 100 mA Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Current IR VR=30V - - 0.1 A Forward Voltage VF IF=10mA - - 1.0 V Total Capacitance CT VR=1V, f=1MHz - - 0.30 pF Series Resistance rs IF=10mA, f=100MHz - - 1.3 ESD-Capability * - C=200pF, R=0 Both forward and reverse direction 1 pulse 100 - - * Failure cirterion : IR>100nA at VR=30V. Type Name Marking P 9 Lot No. EQUTVALENT CIRCUIT (TOP VIEW) 12 7 D2 D3

  1. 12. 8 2/2 KDP629UL Revision No : 0 REVERSE CURRENT IR (A) REVERSE VOLTAGE VR (V) IR - VRIF - VF FORWARD VOLTAGE VF (V) FORWARD CURRENT IF (A) 024 8 61 0 100 10-6 10-5 10-4 10-3 10-2 10-1 10-11 10-10 10-09100 02 6 1 0 48 TOTAL CAPACITANCE CT (pF) CT - VR 624 8 1 0 0.1 1.0 FORWARD CURRENT IF (mA) SERIES RESISTANCE rS (Ω ) rs - IF REVERSE VOLTAGE VR (V) Ta=25 C f=1MHz Ta=25 C f=100MHz Ta=25 C Ta=25 C