KDG20N120H2 KEDA | Alldatasheet

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 1200V,20A,VCE(sat)(typ.)=2.1V@VGE=15V，20A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  Square RBSOA using NPT technology General Description KEDA NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switching applications. Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-Emitter Voltage 1200 V VGES Gate-Emitter Voltage + 30 V IC Continuous Collector Current ( TC=25 ℃) 40 A Continuous Collector Current ( TC=100℃) 20 A ICM Pulsed Collector Current (Note 1) 190 A IF Diode Continuous Forward Current ( TC=100 ℃) 15 A IFM Diode Maximum Forward Current (Note 1) 190 A tsc Short Circuit Withstand Time 10 us PD Maximum Power Dissipation ( TC=25 ℃) 192 W Maximum Power Dissipation ( TC=100℃) 76 W TJ Operating Junction Temperature Range -55 to +150 ℃ TSTG Storage Temperature Range -55 to +150 ℃ Thermal Characteristics Symbol Parameter Max. Units Rth j-c Thermal Resistance, Junction to case for IGBT 0.45 ℃/ W Rth j-c Thermal Resistance, Junction to case for Diode 0.85 ℃/ W Rth j-a Thermal Resistance, Junction to Ambient 40 ℃/ W

www.kedasemi.com - 2 - Rev1.1 November. Total 9 Pages KKDDGG2200NN112200HH22 Electrical Characteristics (TC=25℃ unless otherwise noted ) Symbol Parameter Test Conditions Min. Typ. Max. Units BVCES Collector-Emitter Breakdown Voltage VGE= 0V, IC= 250uA 1200 - - V ICES Collector-Emitter Leakage Current VCE= 1200V, VGE= 0V - - 250 uA IGES Gate Leakage Current, Forward VGE=30V, VCE= 0V - - 100 nA Gate Leakage Current, Reverse VGE= -30V, VCE= 0V - - -100 nA VGE(th) Gate Threshold Voltage VGE= VCE, IC= 250uA 4.5 - 5.5 V VCE(sat) Collector-Emitter Saturation Voltage VGE=15V, IC= 20A - 2.1 2.3 V Qg Total Gate Charge VCC=960V VGE=15V IC=20A - 120 140 nC Qge Gate-Emitter Charge - 30 50 nC Qgc Gate-Collector Charge - 60 80 nC t d(on) Turn-on Delay Time VCC=600V VGE=15V IC=20A RG=28Ω Inductive Load TC=25 ℃ - 40 - ns t r Turn-on Rise Time - 50 - ns t d(off) Turn-off Delay Time - 450 - ns t f Turn-off Fall Time - 100 - ns Eon Turn-on Switching Loss - 1.5 - mJ Eoff Turn-off Switching Loss - 1.2 - mJ Ets Total Switching Loss - 2.7 - mJ Cies Input Capacitance VCE=25V VGE=0V f = 100kHz - 540 - pF Coes Output Capacitance - 135 - pF Cres Reverse Transfer Capacitance - 77 - pF RGint Integrated gate resistor 1.8 1.9 2.0 Ω Electrical Characteristics of Diode (TC=25℃ unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Units VF Diode Forward Voltage IF=15A 1.8 - 2.4 V t r r Diode Reverse Recovery Time VCE = 600V IF= 15A dIF/dt = 500A/us - 110 ns I r r Diode peak Reverse Recovery Current - 16 A Qr r Diode Reverse Recovery Charge - 1060 nC Notes： 1. Repetitive Rating: Pulse width limited by maximum junction temperature

www.kedasemi.com - 3 - Rev1.1 November. 2011 Total 9 Pages KKDDGG2200NN112200HH22 Typical Performance Characteristics Figure1:maximum DC collector current Figure2:power dissipation VS. case temprature VS. case temprature Figure3:forward SOA,TC=25℃,TJ≤150℃ Figure4:reverse bias SOA,TJ=150℃,VGE=15V

www.kedasemi.com - 4 - Rev1.1 November. Total 9 Pages KKDDGG2200NN112200HH22 Figure5:typical IGBT output characteristics, Figure6:typical trans characteristics,VCE=20V,tp=20us TJ=25℃;tp=300us Figure7:typical diode forward characteristic,tp=300us Figure8:typical VCE VS. VGE,TJ=25℃

www.kedasemi.com - 5 - Rev1.1 November. 2011 Total 9 Pages KKDDGG2200NN112200HH22 Figure9: typical VCE VS. VGE,TJ=125℃ Figure10: typical energy loss VS. IC, TC=25℃,L=500uH, VCE=600V,VGE=15V,Rg=28Ω Figure11: typical switching time VS. IC, TC=25℃, Figure12: typical energy loss VS. Rg,TC=25℃, L=500uH, VCE=600V,VGE=15V,Rg=28Ω L=500uH,VCE=600V,VGE=15V,IC=20A

www.kedasemi.com - 6 - Rev1.1 November. Total 9 Pages KKDDGG2200NN112200HH22 Figure13: typical switching time VS. Rg,TC=25℃, Figure14: typical diode IRR VS. IF, TC=25℃ L=500uH,VCE=600V,VGE=15V,IC=20A VCC=600V,VGE=15V Figure15:typical diode IRR VS. dIF/dt Figure16:typical diode QRR VS. dIF/dt VCC=600V,VGE=15V,IF=20A VCC=600V,VGE=15V

www.kedasemi.com - 7 - Rev1.1 November. 2011 Total 9 Pages KKDDGG2200NN112200HH22 Figure17:typical capacitance VS. VCE,VGE=0V,f=100kHz Figure18:typical gate charge VS. VGE,IC=20A Figure19:normalized transient trermal impedance,junction-to-case Note1.Duty factor D=t1/t2; Note2:peak TJ=PDM×Zthjc+TC

www.kedasemi.com - 8 - Rev1.1 November. Total 9 Pages KKDDGG2200NN112200HH22 TO247 PACKAGE OUTLINE

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