KDD6030L KEXIN | Alldatasheet
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12 A, 30 V. RDS(ON) = 14.5m @V GS =1 0V RDS(ON) =2 1 m @V GS =4 . 5V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage V DSS 30 V Gate to Source Voltage V GS 20 V Drain Current Continuous @TC=25 (Note 3) 50 A @Ta=25 (Note 1a) 12 A Drain Current Pulsed (Note 1a) 100 A Power dissipation @ TC=25 (Note 3) 56 Power dissipation @ Ta=25 (Note 1a) 3.2 Power dissipation @ Ta=25 (Note 1b) 1.5 Operating and Storage Temperature T J,T STG - 5 5t o1 7 5 Thermal Resistance Junction to Case (Note 1) R JC 2.7 /W Thermal Resistance Junction to Ambient (Note 1a) R JA 45 /W Thermal Resistance Junction to Ambient (Note 1b) R JA 96 /W ID PD W
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain-Source Avalanche Energy E AS Single Pulse, VDD =1 5V ,ID= 12A (Note 2) 100 mJ Maximum Drain-Source Avalanche Current I AR ( Not 2) 12 A Drain-Source Breakdown Voltage B VDSS VGS =0V ,I D = 250 A 30 V Breakdown Voltage Temperature Coefficient ID =2 5 0 A, Referenced to 25 24 mV/ Zero Gate Voltage Drain Current I DSS VDS =2 4V ,VGS =0V 1 A Gate-Body Leakage I GSS VGS = 20 V, VDS =0V 100 nA Gate Threshold Voltage V GS(th) VDS =V GS,I D =2 5 0 A 11 . 93 V Gate Threshold Voltage Temperature Coefficient ID =2 5 0 A, Referenced to 25 -5 mV/ VGS =1 0V ,ID = 12A 7.7 14.5 VGS =4 . 5V ,ID = 10A 9.9 21 VGS =1 0V ,ID =12 A,TJ = 125 11.4 25 On-State Drain Current I D(on) VGS =1 0V ,VDS =5V 5 0 A Forward Transconductance g FS VDS =1 0V ,ID =1 2A 4 7 S Input Capacitance C iss 1230 pF Output Capacitance C oss 325 pF Reverse Transfer Capacitance C rss 150 pF Gate Resistance R G VGS = 15 mV, f = 1.0 MHz 1.5 pF Turn-On Delay Time t d(on) 10 19 ns Turn-On Rise Time tr 7 13 ns Turn-Off Delay Time t d(off) 29 46 ns Turn-Off Fall Time t f 12 21 ns Total Gate Charge Q g 13 28 nC Gate-Source Charge Q gs 3.5 nC Gate-Drain Charge Q gd 5.1 nC Maximum Continuous Drain-Source Diode Forward Current IS 2.7 A Drain-Source Diode Forward Voltage V SD VGS =0V ,I S = 2.9 A (Not 2) 0.76 1.2 V Diode Reverse Recovery Time trr 24 nS Diode Reverse Recovery Charge Qrr 13 nC I F =1 2A ,diF/dt =1 0 0A /s VDS =1 5V ,ID =1 2A , VGS =5V( N o t e2 ) mRDS(on)Static Drain-Source On-Resistance VDD =1 5V ,ID =1A , VGS =1 0V ,RGEN =6 (Note 2) VDS =1 5V ,VGS =0V , f=1 . 0M H z KDD6030L