KDD2572 KEXIN | Alldatasheet
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rDS(ON) = 45m (Typ.), VGS = 10V, ID =9 A Qg(tot) = 26nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage V DSS 150 V Gate to Source Voltage V GS 20 V Drain Current Continuous (TC =2 5 ,V GS = 10V) 29 A Drain Current Continuous (TC = 100 ,V GS = 10V) 20 A Drain Current Continuous(TC=100 ,VGS=10V,R JA=52 /W)) 4A Single Pulse Avalanche Energy * E AS 36 mJ Power dissipation P D 135 W Derate above 25 PD 0.9 W/ Operating and Storage Temperature T J,T STG - 5 5t o1 7 5 Thermal Resistance Junction to Case R JC 1.11 /W Thermal Resistance Junction to Ambient to252 R JA 100 /W Thermal Resistance Junction to Ambient to252 ,1in2 copper pad area R JA 52 /W *S t a r t i n gTJ =2 5 ,L=0 . 2m H ,IAS = 19A. ID N-Channel PowerTrench MOSFET KDD2572
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain to Source Breakdown Voltage B VDSS ID = 250 A, VGS =0 V 150 V VDS = 120V,VGS =0 V 1 VDS = 120V,VGS =0 V , TC = 150 250 Gate to Source Leakage Current I GSS VGS = 20V 100 nA Gate Threshold Voltage V GS(th) VDS =V GS,I D = 250 A 24 V ID =9 A ,VGS = 10V 0.045 0.054 ID =4 A ,VGS = 6V, 0.05 0.075 ID =9 A ,VGS = 10V,TC = 175 0.126 0.146 Input Capacitance C ISS 1770 pF Output Capacitance C OSS 183 pF Reverse Transfer Capacitance C RSS 40 pF Total Gate Charge at 10V Q g(TOT) VGS =0V to 10V,VDD=75V,ID=9A,Ig=1.0mA 26 34 nC Threshold Gate Charge Q g(TH) VGS=0V to 2V,VDD=75V,ID=9A,Ig=1.0mA 3.3 4.3 nC Gate to Source Gate Charge Q gs 8n C Gate Charge Threshold to Plateau Q gs2 5n C Gate to Drain "Miller" Charge Q gd 6n C Turn-On Time t ON 36 ns Turn-On Delay Time t d(ON) 11 ns Rise Time t r 14 ns Turn-Off Delay Time t d(OFF) 31 ns Fall Time t f 14 ns Turn-Off Time t OFF 66 ns ISD =9 A 1 . 2 5 V ISD =4 A 1 . 0 V Reverse Recovery Time t rr ISD =9 A ,dISD/dt= 100A/ s 74 ns Reverse Recovery Charge Q RR ISD =9 A ,dISD/dt= 100A/ s 169 nC IDSSZero Gate Voltage Drain Current A Source to Drain Diode Voltage V SD VDS = 25V, VGS =0 V , f=1 M H z Drain to Source On-Resistance r DS(ON) VDD = 75V,ID =9 A , Ig =1 . 0 m A VDD = 75V, ID = 33A,VGS = 10V, RGS =1 1 KDD2572