KDB6030L KEXIN | Alldatasheet
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52A, 30 V. RDS(ON) =0 . 0 1 3 5@V GS =1 0V RDS(ON) =0 . 0 2 0@V GS =4 . 5V Low gate charge (typical 34 nC). Low Crss (typical 175 pF). Fast switching speed. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage V DSS 30 V Gate to Source Voltage V GS 20 V Drain Current Continuous 52 A Drain Current Pulsed 156 A Power dissipation @ T C=25 PD 75 W Derate above 25 PD 0.5 W/ Operating and Storage Temperature T J,T STG - 6 5t o1 7 5 Thermal Resistance Junction to Case R JC 2 /W Thermal Resistance Junction to Ambient R JA 62.5 /W ID N-Channel Logic Level Enhancement Mode Field Effect Transistor KDB6030L
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Single Pulse Drain-Source Avalanche Energy * W DSS VDD =1 5V ,ID = 21A 150 mJ Maximum Drain-Source Avalanche Current I AR 21 A Drain-Source Breakdown Voltage B VDSS VGS =0V ,I D = 250 A 30 V Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25 37 mV/ Zero Gate Voltage Drain Current I DSS VDS =2 4V ,VGS =0V 1 0 A Gate-Body Leakage, Forward I GSSF VGS =2 0V ,VDS = 0 V 100 nA Gate-Body Leakage, Reverse I GSSR VGS =- 2 0V ,VDS =0V - 1 0 0 n A Gate Threshold Voltage V GS(th) VDS =V GS,I D = 250 A 11 . 6 3 V Gate Threshold Voltage Temperature Coefficient ID = 250 A, Referenced to 25 -4 mV/ VGS =1 0V ,ID = 26 A 0.0095 0.0135 VGS =1 0V ,ID = 26 A,TJ = 125 0.014 0.023 VGS =4 . 5V ,ID =21 A, 0.015 0.02 On-State Drain Current I D(on) VGS =1 0V ,VDS =1 0V 6 0 A On-State Drain Current I D(on) VGS =4 . 5V ,VDS =1 0V 1 5 Forward Transconductance g FS VDS =1 0V ,ID =2 6A 3 7 S Input Capacitance C iss 1230 pF Output Capacitance C oss 640 pF Reverse Transfer Capacitance C rss 175 pF Turn-On Delay Time t d(on) 7.6 15 ns Turn-On Rise Time tr 150 210 ns Turn-Off Delay Time t d(off) 29 46 ns Turn-Off Fall Time t f 17 27 ns Total Gate Charge Q g 34 46 nC Gate-Source Charge Q gs 6n C Gate-Drain Charge Q gd 8n C Maximum Continuous Drain– Source Diode Forward Current * IS 52 A Drain-Source Diode Forward Voltage V SD VGS =0V ,I S = 26 A * 0.91 1.3 V Drain-Source Diode Forward Voltage V SD VGS =0V ,I S =2 6A* TJ=125 0.8 1.2 V * Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% VDS =1 2V ,ID = 26A,VGS =1 0V* mRDS(on)Static Drain-Source On-Resistance VDD =1 5V ,ID =5 2A , VGS =1 0V , RGEN =2 4 * VDS =1 5V ,VGS =0V , f=1 . 0M H z KDB6030L