KDB5690 KEXIN | Alldatasheet
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32 A, 60 V. RDS(ON) = 0.027 @V GS =1 0V RDS(ON) = 0.032 @V GS =6V Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trench technology for extremely low RDS(ON). 175 maximum junction temperature rating. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage V DSS 60 V Gate to Source Voltage V GS 20 V Drain Current Continuous 32 A Drain Current Pulsed 100 A Power dissipation @ T C=25 PD 58 W Derate above 25 PD 0.4 W/ Operating and Storage Temperature T J,T STG -65 to 175 Thermal Resistance Junction to Case R JC 2.6 /W Thermal Resistance Junction to Ambient R JA 62.5 /W ID
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Single Pulse Drain-Source Avalanche Energy * W DSS VDD =3 0V ,ID = 32A 80 mJ Maximum Drain-Source Avalanche Current I AR 32 A Drain– Source Breakdown Voltage B VDSS VGS =0V ,I D =2 5 0 A 60 V Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25 61 mV/ Zero Gate Voltage Drain Current I DSS VDS =4 8V ,VGS =0V 1 A Gate-Body Leakage, Forward I GSSF VGS =2 0V ,VDS = 0 V 100 nA Gate-Body Leakage, Reverse I GSSR VGS =- 2 0V ,VDS = 0 V -100 nA Gate Threshold Voltage V GS(th) VDS =V GS,I D = 250 A 22 . 54 V Gate Threshold Voltage Temperature Coefficient ID = 250 A, Referenced to 25 -6.4 mV/ VGS =1 0V ,ID = 16 A 0.021 0.027 VGS =1 0V ,ID =1 6A , T J=1 2 5 0.042 0.055 VGS =6V ,I D =15 A, 0.024 0.032 On– State Drain Current I D(on) VGS =1 0V ,VDS =5V 5 0 A Forward Transconductance g FS VDS =5V ,I D =1 6A 3 2 S Input Capacitance C iss 1120 pF Output Capacitance C oss 160 pF Reverse Transfer Capacitance C rss 80 pF Turn-On Delay Time t d(on) 10 18 ns Turn-On Rise Time tr 9 18 ns Turn-Off Delay Time t d(off) 24 39 ns Turn-Off Fall Time t f 10 18 ns Total Gate Charge Q g 23 33 nC Gate– Source Charge Q gs 3.9 nC Gate– Drain Charge Q gd 6.8 nC Maximum Continuous Drain-Source Diode Forward Current IS 32 A Drain-Source Diode Forward Voltage V SD VGS =0V ,I S = 16 A * 0.92 1.2 V * Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% VDS =1V ,I D =1 6A , VGS =1 0V* mRDS(on)Static Drain-Source On-Resistance VDD =3 0V ,ID =1A , VGS =1 0V ,RGEN =6 * VDS =2 5V ,VGS =0V , f=1 . 0M H z KDB5690