KDB4020P KEXIN | Alldatasheet

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-16 A, -20 V. RDS(on) =0 . 0 8Ù@VGS =- 4 . 5V RDS(on) =0 . 1 1Ù@VGS =- 2 . 5V . Critical DC electrical parameters specified at elevated temperature. High density cell design for extremely low RDS(on). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage V DSS -20 V Gate to source voltage V GSS 8 V Drain current T C=25 ID -16 A Drain current-pulsed I dp -48 A Power dissipation 37.5 W Derate above 25 0.25 W/ Thermal Resistance, Junction-to- Case R èJC 4 /W Thermal Resistance Junction to Ambient R èJA 40 /W Channel temperature T ch 175 Storage temperature T stg - 5 5t o+ 1 7 5 PD

www.kexin.com.cn MOSFET Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain to source breakdown voltage V DSS ID=250ìA VGS=0V -20 V Drain cut-off current I DSS VDS=-16V,VGS=0,TC=25 -1 A Gate leakage current I GSS VGS= 8V,VGS=0V 100 nA Gate threshold voltage V GS(th) VDS =V GS,I D = -250ìA -0.4 -0.58 -1 V VGS=-4.5V,ID=-8A 0.068 0.08 VGS=-4.5V,ID=-8A,TJ=125 0.098 0.13 VGS=-2.5V,ID=-7A 0.096 0.110 On-State Drain Current I D(on) VGS =- 4 . 5V ,VDS =- 5V - 2 0 A Forward Transconductance g FS VDS =- 5V ,ID =- 8A 1 4 S Input capacitance C iss 665 pF Output capacitance C oss 270 pF Reverse transfer capacitance C rss 70 pF Total Gate Charge Q g VDS = -5 V, 9.5 13 nC Gate-Source Charge Q gs ID =- 1 6A ,VGS = -4.5 V * 1.3 nC Gate-Drain Charge Q gd 2.2 nC Turn-on delay time t on 81 6 n s Rise time t r 24 38 ns Turn-off delay time t off 50 80 ns Fall time tf 29 45 ns Maximum Continuous Drain-Source Diode Forward Current IS -16 A Maximum Pulsed Drain-Source Diode Forward Current ISM -48 A Drain-Source Diode Forward Voltage V SD VGS =0V ,I S =- 1 6A* - 1 . 2 V * Pulse Test: Pulse Width 300 ìs, Duty Cycle 2.0% Ù VDS=-10V,VGS=0,f=1MHZ VDD =- 5V ,ID =- 1A , VGS =- 4 . 5V ,RGEN =6Ù * Drain to source on-state resistance R DS(on) KDB4020P(FDB4020P)