KDB3632 KEXIN | Alldatasheet
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rDS(ON) =7 . 5 m(Typ.), VGS = 10V, ID = 80A Qg(tot) = 84nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage V DSS 100 V Gate to source voltage V GSS 20 V Drain current-Continuous T C 111 80 A TA=25 12 A Power dissipation 310 W Derate above 25 2.07 W/ Thermal Resistance Junction to Ambient R èJA 43 /W Thermal Resistance, Junction-to-Case R èJC 0.48 /W Channel temperature T ch 175 Storage temperature T stg - 5 5t o+ 1 7 5 PD ID
www.kexin.com.cn MOSFET Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain to source breakdown voltage V DSS ID=250ìA VGS=0V 100 V VDS=80V,VGS=0 1 A VDS=80V,VGS=0,TC=150 250 A Gate leakage current I GSS VGS= 20V 100 nA Gate threshold voltage V GS(th) VDS =V GS,I D = 250ìA 2.0 4.0 V VGS=10V,ID=80A 0.0075 0.009 VGS=6V,ID=40A 0.009 0.015 VGS=10V,ID=80A,TC=175 0.018 0.022 Input capacitance C iss 6000 pF Output capacitance C oss 820 pF Reverse transfer capacitance C rss 200 pF Total Gate Charge at 10V Q g(TOT) VGS = 0V to 10V 84 110 nC Threshold Gate Charge Q g(TH) VGS =0 Vt o2 V 1 1 1 4 n C Gate to Source Gate Charge Q gs 30 nC Gate Charge Threshold to Plateau Q gs2 20 nC Gate to Drain "Miller" Charge Q gd 20 nC Turn-On Time t ON 102 ns Turn-On Delay Time t d(ON) 30 ns Rise Time t r 39 ns Turn-Off Delay Time t d(OFF) 96 ns Fall Time t f 46 ns Turn-Off Time t OFF 213 ns ISD=80A 1.25 V ISD=40A 1.0 V Reverse Recovery Time tr r ISD = 75A, dISD/dt =100A/ìs 64 ns Reverse Recovered Charge Q RR ISD = 75A, dISD/dt =100A/ìs 120 nC Ù Source to Drain Diode Voltage V SD VDS=25V,VGS=0,f=1MHZ VDS =5 0V ,ID = 80A,Ig=1.0mA Drain cut-off current I DSS VDD =5 0V ,ID =8 0 A , VGS =1 0V ,RGEN =3 . 6 Drain to source on-state resistance R DS(on) KDB3632(FDB3632)