KDB2532 KEXIN | Alldatasheet
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rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A Qg(tot) = 82nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage V DSS 150 V Gate to source voltage V GSS 20 V Drain current-Continuous T C=25 79 A TA=25 8A Power dissipation 310 W Derate above 25 2.07 W/ Thermal Resistance Junction to Ambient R èJA 43 /W Channel temperature T ch 175 Storage temperature T stg - 5 5t o+ 1 7 5 PD ID
www.kexin.com.cn MOSFET Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain to source breakdown voltage V DSS ID=250ìA VGS=0V 150 V VDS=120V,VGS=0 1 VDS=120V,VGS=0,TC=150 250 Gate leakage current I GSS VGS= 20V 100 nA Gate threshold voltage V GS(th) VDS =V GS,I D =2 5 0 ì A 2 . 0 4 . 0 V VGS=10V,ID=33A 0.014 0.016 VGS=6V,ID=16A 0.016 0.024 VGS=10V,ID=33A,TC=175 0.040 0.048 Input capacitance C iss 5870 pF Output capacitance C oss 615 pF Reverse transfer capacitance C rss 135 pF Total Gate Charge at 10V Q g(TOT) VGS = 0V to 10V 82 107 nC Threshold Gate Charge Q g(TH) VGS =0 Vt o2 V 1 1 1 4 n C Gate to Source Gate Charge Q gs VDS = 75V, 23 nC Gate Charge Threshold to Plateau Q gs2 Ig=1.0mA 13 nC Gate to Drain "Miller" Charge Q gd ID = 33A 19 nC Turn-On Time t ON 69 ns Turn-On Delay Time t d(ON) 16 ns Rise Time t r 30 ns Turn-Off Delay Time t d(OFF) 39 ns Fall Time t f 17 ns Turn-Off Time t OFF 84 ns Reverse Recovery Time t rr ISD = 33A, diSD/dt = 100A/ìs 105 ns Reverse Recovered Charge Q RR ISD = 33A, diSD/dt = 100A/ìs 327 nC ISD = 33A 1.25 V ISD = 16A 1.0 V Source to Drain Diode Voltage V SD A Drain to source on-state resistance R DS(on) Ù VDS=25V,VGS=0,f=1MHZ Drain cut-off current I DSS VDD = 75V, ID = 33A VGS = 10V, RGS =3 . 6 KDB2532(FDB2532)