KDB15N50 KEXIN | Alldatasheet
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Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness Reduced rDS(ON) Reduced Miller Capacitance and Low Input Capacitance Improved Switching Speed with Low EMI Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage V DSS 500 V Gate to source voltage V GSS 30 V Drain current T C=25 ID 15 A Drain current-pulsed I dp 60 A Power dissipation 300 W Derate above 25 2 W/ Thermal Resistance Junction to Ambient R èJA 62 /W Channel temperature T ch 175 Storage temperature T stg - 5 5t o+ 1 7 5 PD
www.kexin.com.cn MOSFET Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain to source breakdown voltage V DSS ID=250ìA VGS=0V 500 V Drain cut-off current I DSS VDS=500V,VGS=0,TC=25 25 A Gate leakage current I GSS VGS= 30V 100 nA Gate threshold voltage V GS(th) VDS =V GS,I D = 250ìA 2.0 3.4 4.0 V Drain to source on-state resistance R DS(on) VGS=10V,ID=7.5A 0.33 0.38 Ù Input capacitance C iss 1850 pF Output capacitance C oss 230 pF Reverse transfer capacitance C rss 16 pF Forward Transconductance g fs VDD = 10V, ID =7 . 5 A 1 0 S Total Gate Charge at 10V Q g(TOT) VGS = 10V, 33 41 nC Gate to Source Gate Charge Q gs VDS = 400V, 7.2 10 nC Gate to Drain "Miller" Charge Q gd ID = 15A 12 16 nC Turn-on delay time t on 9n s Rise time t r 5.4 ns Turn-off delay time t off 26 ns Fall time tf 5 ns Reverse Recovery Time t rr ISD = 15A, diSD/dt = 100A/ìs 470 730 ns Reverse Recovered Charge Q RR ISD = 15A, diSD/dt = 100A/ìs 5 6.6 ìC Continuous Source Current I S 15 A Pulsed Source Current1 I SM 60 A VDS=25V,VGS=0,f=1MHZ ID=15A,RG=6.2 ,VDD=250V,RD=17Ù KDB15N50(FDB15N50)