KTD1414 ISC | Alldatasheet
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Technical content
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNDarlingtonPowerTransistor KTD1414
DESCRIPTION
- Collector-EmitterBreakdown Voltage- :V(BR)CEO=80V(Min)
- Collector-EmitterSaturationVoltage- :VCE(sat)=1.5V(Max) @IC=3A
- High DCCurrentGain :hFE=2000(Min)@IC=1A,VCE=2V
APPLICATIONS
- Switchingapplications
- Hammerdriver,pulsemotordriverapplications
- Power amplifierapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 100 V VCEO Collector-EmitterVoltage 80 V VEBO Emitter-BaseVoltage 5 V IC CollectorCurrent-Continuous 4 A IB BaseCurrent-Continuous 0.5 A PC CollectorPowerDissipation @TC=25℃ 25 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNDarlingtonPowerTransistor KTD1414 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=10mA;IB=0 80 V VCE(sat) Collector-EmitterSaturationVoltage IC=3A;IB=6mA 1.5 V VBE(sat) Base-EmitterSaturationVoltage IC=3A;IB=6mA 2.0 V ICBO CollectorCutoffCurrent VCB=100V;IE=0 20 μA IEBO EmitterCutoffCurrent VEB=5V;IC=0 2.5 mA hFE -1 DCCurrentGain IC=1A;VCE=2V 2000 hFE -2 DCCurrentGain IC=3A;VCE=2V 1000 Switchingtimes ton Turn-onTime IB1=-IB2=6mA RL=10Ω;VCC=30V PW=20μs;DutyCycle≤1% 0.2 μs tstg StorageTime 1.5 μs tf FallTime 0.6 μs