KBU802

KBU8005_V01 CHENDA | Alldatasheet

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DN:T19813A0 https://www.microdiode.com Rev:2019A0 Page :1 Reverse Voltage - 50 to 1000 Volts Forward Current - 8.0 Amperes KBU8005 THRU KBU810 F eatures Maximum Ratings And Electrical Characteristics Ratings at 25°C ambient temperature unless otherwisespecified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Mechanical Data Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Plastic material has U/L lammability classific ation 94V-0 High temperature soldering guaranteed: 260°C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension Case : JEDEC KBU Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.27ounce，7.59grams KBU Dimensions in inches and (millimeters) Parameter SYMBOLS KBU 8005 KBU 801 KBU 802 KBU 804 KBU 806 KBU 808 KBU

810 UNITS

Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward(with heatsink NOTE 2) Rectified current @T c =100°C(without heatsink) I(AV) 8.0 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 200.0 A Maximum forward voltage at 4.0A DC VF 1.0 V Maximum DC reverse current TA=25°C at rated DC blocking voltage TA=125°C IR 10 μA 0.5 mA Typical Junction Capacitance (Note 1) CJ 200 pF Typical Thermal Resistance (Note 2) RθJA 5.0 °C/W Operating junction temperature range TJ - 5 5t o+ 1 5 0 °C storage temperature range TSTG - 5 5t o+ 1 5 0 °C NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2.Device mounted on 75mm*75mm*1.6mm cu plate heatsink. 3.The typical data above is for reference only. 0.052(1.3) 0.048(1.2) 0.280(7.1) 0.268(6.8) 0.140 (3.5) DIA. 0.866 (22.0)MIN. 0.700(17.8) 0.600(16.8) 0.935(23.7) 0.895(22.7) 0.300 (7.5) 0.780(19.8) 0.740(18.8) 0.15 x0.23L (3.8 x5.7L) HOLE THRU AC 0.220(5.6) 0.180(4.6)

Rev:2019A0 Page :2 Ratings And Characteristic Curves The curve abov e is for reference only. https://www.microdiode.com Reverse Voltage - 50 to 1000 Volts Forward Current - 8.0 Amperes KBU8005 THRU KBU810 0 25 50 75 100 125 150 175 200 160 120 0.1 1.0 10 100 0.01 0.1 1 10 100 100 0.1 REVERSE VOLTAGE,VOLTS t,PULSE DURATION,sec. FIG. 5-TYPICAL JUNCTION CAPACITANCE FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS NUMBER OF CYCLES AT 60 Hz FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG. 1- FORWARD CURRENT DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT,AMPERESINSTANTANEOUS FORWARDCURRENT,AMPERESJUNCTION CAP ACITANCE, pF PEAK FORWARD SURGE CURRENT,AMPERES INSTANTANEOUS FORWARD VOLTAGE, VOLTS Single Phase Half Wave 60Hz Resistive or inductive Load 1 10 100 0.01 0.1 TJ=25 C PULSE WIDTH=300 µs 1%DUTY CYCLE TJ=25 C 100 300 350 0 20 40 60 80 100 1,000 100 0.1 0.01 TJ=100 C TJ=25 C PERCENT OF PEAK REVERSE VOLTAGE,% FIG. 4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT,MICROAMPERESTRANSIENT THERMAL IMPEDANCE,C/W AMBIENT TEMPERATURE, C 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method)