KBU800G WTE | Alldatasheet
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! G l a s s P a s s i v a t e d D i e C o n s t r u c t i o n A ! L o w F o r w a r d V o l t a g e D r o p B C ! H i g h C u r r e n t C a p a b i l i t y D ! High Reliability ! High Surge Current Capability K L ! I d e a l f o r P r i n t e d C i r c u i t B o a r d s - ~ ~ + E J G Mechanical Data ! C a s e : M o l d e d P l a s t i c H ! Terminals: Plated Leads Solderable per M MIL-STD-202, Method 208 ! Polarity: As Marked on Body ! Weight: 8.0 grams (approx.) ! Mounting Position: Any ! Marking: Type Number N P Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol KBU 800G KBU 801G KBU 802G KBU 804G KBU 806G KBU 808G KBU 810G Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage V R(RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current @TA = 65°C I O 8.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 200 A Forward Voltage (per element) @IF = 4.0A V FM 1.1 V P e a k R e v e r s e C u r r e n t @ TA = 25°C At Rated DC Blocking Voltage @TA = 125°C IR 5.0 500 µA Operating and Storage Temperature Range T j, TSTG -55 to +150 °C WTE POWER SEMICONDUCTORS KBU Dim Min Max A 22.70 23.70 B 3.80 4.10 C 4.20 4.70 D 1.70 2.20 E 10.30 11.30 G 4.50 6.80 H 4.60 5.60 J 25.40 — K — 19.30 L 16.80 17.80 M 6.60 7.10 N 4.70 5.20 P 1.20 1.30 All Dimensions in mm
0.1 1.0 100 0.6 0.8 1.0 1.2 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics, per element F T = 25°C Pulse width = 300 µs j 100 150 200 250 300 1 10 100 I , PEAK FWD SURGE CURRENT (A)F NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Forward Surge Current T = 125°C 8.3 ms Single half-sine-wave j 0.1 1.0 0 40 80 120 0.01 I , INSTANTANEOUS REVERSE CURRENT (µA)R PERCENT OF PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics T = 100°Cj T = 25°Cj 0 50 100 150 I , AVERAGE FORWARD CURRENT (A)(AV) T , AMBIENT TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve A Mounted on4X4 inch Copper PC Board 12.7 mm lead length 100 1000 1 10 100 C , CAPACITANCE (pF)J V , REVERSE VOLTAGE (V) Fig. 4 Typ Junction Capacitance per element R 0.1 T = 25°Cj f=1M H z KBU 800G – KBU810G 2 of 3 © 2002 W on-Top Electronics
KBU800G – KBU810G 3 of 3 © 2002 Won-Top Electronics
ORDERING INFORMATION
Product No. Package Type Shipping Quantity KBU800G SIL Bridge 400 Units/Box KBU801G SIL Bridge 400 Units/Box KBU802G SIL Bridge 400 Units/Box KBU804G SIL Bridge 400 Units/Box KBU806G SIL Bridge 400 Units/Box KBU808G SIL Bridge 400 Units/Box KBU810G SIL Bridge 400 Units/Box Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, W TE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in l ife support devices or systems without the express written approval. We power your everyday. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com