KBU600G WTE | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

Features

! G l a s s P a s s i v a t e d D i e C o n s t r u c t i o n A ! L o w F o r w a r d V o l t a g e D r o p B C ! H i g h C u r r e n t C a p a b i l i t y D ! High Reliability ! High Surge Current Capability K L ! I d e a l f o r P r i n t e d C i r c u i t B o a r d s - ~ ~ + E J G Mechanical Data ! Case: Molded Plastic H ! Terminals: Plated Leads Solderable per M MIL-STD-202, Method 208 ! Polarity: As Marked on Body ! Weight: 8.0 grams (approx.) ! Mounting Position: Any ! Marking: Type Number N P Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol KBU 600G KBU 601G KBU 602G KBU 604G KBU 606G KBU 608G KBU 610G Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage V R(RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current @TA = 65°C I O 6.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 175 A Forward Voltage (per element) @IF = 3.0A V FM 1.1 V P e a k R e v e r s e C u r r e n t @ TA = 25°C At Rated DC Blocking Voltage @TA = 125°C IR 5.0 500 µA Operating and Storage Temperature Range T j, TSTG -55 to +150 °C WTE POWER SEMICONDUCTORS KBU Dim Min Max A 22.70 23.70 B 3.80 4.10 C 4.20 4.70 D 1.70 2.20 E 10.30 11.30 G 4.50 6.80 H 4.60 5.60 J 25.40 — K — 19.30 L 16.80 17.80 M 6.60 7.10 N 4.70 5.20 P 1.20 1.30 All Dimensions in mm

0.1 1.0 I , INSTANTANEOUS FWD CURRENT (A)F V , INSTANTANEOUS FWD VOLTAGE (V) Fig. 2 Typical Forward Characteristics, per element F T = 25”C Pulse Width = 300 ms j 100 100 150 200 250 1 10 100 8.3ms Single Half Sine-Wave JEDEC Method I , PEAK FWD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current 100 400 1 10 100 C , CAPACITANCE (pF)j V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance Per Element R T = 25”C f = 1MHz j 0.01 0.1 1.0 0 20 40 60 80 100 120 140 I , INSTANTANEOUS REVERSE CURRENT (mA)R RATED PERCENT OF PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics T = 25”Cj T = 100”Cj 20 40 60 80 100 120 140 I , AVERAGE OUTPUT CURRENT (A)(AV) T , AMBIENT TEMPERATURE (”C) Fig. 1 Forward Current Derating Curve A Single Phase Half Wave

60 Hz Resistive or Inductive Load

KBU 600G – KBU610G 2 of 3 © 2002 W on-Top Electronics

KBU600G – KBU610G 3 of 3 © 2002 Won-Top Electronics

ORDERING INFORMATION

Product No. Package Type Shipping Quantity KBU600G SIL Bridge 400 Units/Box KBU601G SIL Bridge 400 Units/Box KBU602G SIL Bridge 400 Units/Box KBU604G SIL Bridge 400 Units/Box KBU606G SIL Bridge 400 Units/Box KBU608G SIL Bridge 400 Units/Box KBU610G SIL Bridge 400 Units/Box Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, W TE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in l ife support devices or systems without the express written approval. We power your everyday. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com