KBU400G WTE | Alldatasheet
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! G l a s s P a s s i v a t e d D i e C o n s t r u c t i o n A ! L o w F o r w a r d V o l t a g e D r o p B C ! H i g h C u r r e n t C a p a b i l i t y D ! High Reliability ! High Surge Current Capability K L ! I d e a l f o r P r i n t e d C i r c u i t B o a r d s - ~ ~ + E J G Mechanical Data ! Case: Molded Plastic H ! Terminals: Plated Leads Solderable per M MIL-STD-202, Method 208 ! Polarity: As Marked on Body ! Weight: 8.0 grams (approx.) ! Mounting Position: Any ! Marking: Type Number N P Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol KBU 400G KBU 401G KBU 402G KBU 404G KBU 406G KBU 408G KBU 410G Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage V R(RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current @TA = 50°C I O 4.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 150 A Forward Voltage (per element) @IF = 2.0A V FM 1.1 V P e a k R e v e r s e C u r r e n t @ TA = 25°C At Rated DC Blocking Voltage @TA = 125°C IR 5.0 500 µA Operating and Storage Temperature Range T j, TSTG -55 to +150 °C WTE POWER SEMICONDUCTORS KBU Dim Min Max A 22.70 23.70 B 3.80 4.10 C 4.20 4.70 D 1.70 2.20 E 10.30 11.30 G 4.50 6.80 H 4.60 5.60 J 25.40 — K — 19.30 L 16.80 17.80 M 6.60 7.10 N 4.70 5.20 P 1.20 1.30 All Dimensions in mm
0.01 0.1 1.0 I , INSTANTANEOUS FWD CURRENT (A)F V , INSTANTANEOUS FWD VOLTAGE (V) Fig. 2 Typical Forward Characteristics, per element F T = 25°Cj Pulse Width = 300 µs 100 150 200 250 1 10 100 I , PEAK FWD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Surge Current T = 150°Cj Single Half-Sine-Wave (JEDEC Method) 0.01 0.1 1.0 100 1000 0 20 40 60 80 100 120 140 I , INSTANTANEOUS REVERSE CURRENT (µA)R PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics T = 25°Cj T = 100°Cj 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve A I , AVERAGE FWD RECTIFIED CURRENT (A)(AV) Resistive or Inductive load 100 1000 0.1 1 10 100 C , CAPACITANCE (pF)j V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R f=1M h z T = 25°Cj KBU 400G – KBU410G 2 of 3 © 2002 W on-Top Electronics
KBU400G – KBU410G 3 of 3 © 2002 Won-Top Electronics
ORDERING INFORMATION
Product No. Package Type Shipping Quantity KBU400G SIL Bridge 400 Units/Box KBU401G SIL Bridge 400 Units/Box KBU402G SIL Bridge 400 Units/Box KBU404G SIL Bridge 400 Units/Box KBU406G SIL Bridge 400 Units/Box KBU408G SIL Bridge 400 Units/Box KBU410G SIL Bridge 400 Units/Box Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, W TE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in l ife support devices or systems without the express written approval. We power your everyday. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com