KBU1000G WTE | Alldatasheet
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! G l a s s P a s s i v a t e d D i e C o n s t r u c t i o n A ! L o w F o r w a r d V o l t a g e D r o p B C ! H i g h C u r r e n t C a p a b i l i t y D ! High Reliability ! High Surge Current Capability K L ! I d e a l f o r P r i n t e d C i r c u i t B o a r d s - ~ ~ + E J G Mechanical Data ! Case: Molded Plastic H ! Terminals: Plated Leads Solderable per M MIL-STD-202, Method 208 ! Polarity: As Marked on Body ! Weight: 8.0 grams (approx.) ! Mounting Position: Any ! Marking: Type Number N P Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol KBU 1000G KBU 1001G KBU 1002G KBU 1004G KBU 1006G KBU 1008G KBU 1010G Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage V R(RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current @TA = 50°C I O 10 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 200 A Forward Voltage (per element) @IF = 5.0A V FM 1.1 V P e a k R e v e r s e C u r r e n t @ TA = 25°C At Rated DC Blocking Voltage @TA = 125°C IR 5.0 500 µA Operating and Storage Temperature Range T j, TSTG -55 to +150 °C WTE POWER SEMICONDUCTORS KBU Dim Min Max A 22.70 23.70 B 3.80 4.10 C 4.20 4.70 D 1.70 2.20 E 10.30 11.30 G 4.50 6.80 H 4.60 5.60 J 25.40 — K — 19.30 L 16.80 17.80 M 6.60 7.10 N 4.70 5.20 P 1.20 1.30 All Dimensions in mm
0.1 1.0 100 I , INSTANTANEOUS FWD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics, per element F T = 25°Cj Pulse width = 300 µs 100 200 300 1 10 100 I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current T = 150°Cj 8.3 ms Single Half-Sine Wave 0.01 0.1 1.0 0 20 40 60 80 100 120 140 I , INSTANTANEOUS REVERSE CURRENT (µA)R PERCENT OF PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics T = 100°Cj T = 25°Cj 0 50 100 150 I , AVERAGE FWD CURRENT (A)(AV) T , AMBIENT TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve A Mounted on4X4 inch Copper PC Board 12.7mm lead length 100 400 0.1 10 100 C , CAPACITANCE (pF)J V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance per element R 1.0 T = 25°Cj f=1M H z KBU 1000G – KBU1010G 2 of 3 © 2002 W on-Top Electronics
KBU1000G – KBU1010G 3 of 3 © 2002 Won-Top Electronics
ORDERING INFORMATION
Product No. Package Type Shipping Quantity KBU1000G SIL Bridge 400 Units/Box KBU1001G SIL Bridge 400 Units/Box KBU1002G SIL Bridge 400 Units/Box KBU1004G SIL Bridge 400 Units/Box KBU1006G SIL Bridge 400 Units/Box KBU1008G SIL Bridge 400 Units/Box KBU1010G SIL Bridge 400 Units/Box Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, W TE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in l ife support devices or systems without the express written approval. We power your everyday. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com