KBU1000 WTE | Alldatasheet

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! D i f f u s e d J u n c t i o n A ! L o w F o r w a r d V o l t a g e D r o p B C ! H i g h C u r r e n t C a p a b i l i t y D ! High Reliability ! High Surge Current Capability K L ! I d e a l f o r P r i n t e d C i r c u i t B o a r d s - ~ ~ + E J G Mechanical Data ! C a s e : M o l d e d P l a s t i c H ! Terminals: Plated Leads Solderable per M MIL-STD-202, Method 208 ! Polarity: As Marked on Body ! Weight: 8.0 grams (approx.) ! Mounting Position: Any ! Marking: Type Number N P Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol KBU 1000 KBU 1001 KBU 1002 KBU 1004 KBU 1006 KBU 1008 KBU

1010 Unit

Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage V R(RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current @TC = 100°C I O 10 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 300 A Forward Voltage (per element) @IF = 5.0A V FM 1.0 V P e a k R e v e r s e C u r r e n t @ TC = 25°C At Rated DC Blocking Voltage @TC = 100°C IR 1.0 µA mA Rating for Fusing (t < 8.3ms) (Note 1) I 2t 373 A 2s Typical Thermal Resistance (Note 2) R /G01JC 8.0 K/W Operating and Storage Temperature Range T j, TSTG -65 to +150 °C Note: 1. Non-repetitive for t > 1ms and < 8.3ms. WTE POWER SEMICONDUCTORS KBU Dim Min Max A 22.70 23.70 B 3.80 4.10 C 4.20 4.70 D 1.70 2.20 E 10.30 11.30 G 4.50 6.80 H 4.60 5.60 J 25.40 — K — 19.30 L 16.80 17.80 M 6.60 7.10 N 4.70 5.20 P 1.20 1.30 All Dimensions in mm

0.1 1.0 100 I , INSTANTANEOUS FWD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics, per element F T = 25°Cj Pulse width = 300 µs 100 200 300 1 10 100 I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current T = 150°Cj 8.3 ms Single Half-Sine Wave 0.01 0.1 1.0 0 20 40 60 80 100 120 140 I , INSTANTANEOUS REVERSE CURRENT (µA)R PERCENT OF PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics T = 100°Cj T = 25°Cj 0 50 100 150 I , AVERAGE FWD CURRENT (A)(AV) T , CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve C Heat sink Mounting Mounted on4X4 inch Copper PC Board 12.7mm lead length 100 400 0.1 10 100 C , CAPACITANCE (pF)J V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance per element R 1.0 T = 25°Cj f=1M H z KB U 1000 – KBU1010 2 of 3 © 2002 W on-Top Electronics

KBU1000 – KBU1010 3 of 3 © 2002 Won-Top Electronics

ORDERING INFORMATION

Product No. Package Type Shipping Quantity KBU1000 SIL Bridge 400 Units/Box KBU1001 SIL Bridge 400 Units/Box KBU1002 SIL Bridge 400 Units/Box KBU1004 SIL Bridge 400 Units/Box KBU1006 SIL Bridge 400 Units/Box KBU1008 SIL Bridge 400 Units/Box KBU1010 SIL Bridge 400 Units/Box Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, W TE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in l ife support devices or systems without the express written approval. We power your everyday. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com