ABS1 KEXIN | Alldatasheet
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Technical content
www.kexin.com.cn 1 Diodes ■ Features
- Glass Passivated Chip Junction
- Reverse Voltage - 100 to 1000 V
- Forward Current - 1 A
- High Surge Current Capability
- Designed for Surface Mount Application ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol ABS1 ABS2 ABS4 ABS6 ABS8 ABS10 Unit Repetitive Peak Reverse Voltage VRRM 100 200 400 600 80 1000 RMS Voltage VRSM 70 140 280 420 560 700 DC Blocking Voltage VDC 100 200 400 600 80 1000 Forward Voltage @ IF=0.4A @ IF=0.8A Average Rectified Output Current @ Ta=40℃ IO Peak Forward Surge Current @ 8.3ms IFSM Ta=25℃ Maximum DC Reverse Current Ta=100℃ Ta=125℃ Typical Junction Capacitance *1 Cj pF Thermal Resistance.Junction- to-Ambient RθJA Thermal Resistance.Junction- to-Lead RθJL Junction Temperature Tj Storage Temperature Tstg 150 -55 to 150 A 100 μA50 °C/W IR 1.1 VF V * 1 Measured at 1MHz and applied reverse voltage of 4V D.C ■ Marking 0.22 (max) 0.15 (min) 0.95 (max) 0.2(max) 0.6 (max) 6.2±0.2 0.6±0.1 4.5 (max) 4.2 (min) 5.2 (max) 4.9 (min) 4.0±0.2 1.4±0.1 ABS (LBF) Unit:mm
1 Input Pinč~Ď
2 Input Pinč~Ď
3 Output Anodeč+Ď
4 Output Anodeč-Ď
ABS1 ~ ABS10 (KBS1 ~ KBS10) NO. AB1S AB2S AB4S AB6S AB8S AB10S Marking AB1S AB2S AB4S AB6S AB8S AB10S
www.kexin.com.cn2 Diodes ■ Typical Characterisitics 10 1001 Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles 8.3 ms Single Half Sine Wave (JEDEC Method) Fig.2 Typical Reverse Characteristics 0.1 1.0 100 20 40 60 80 100 12000 140 percent of Rated Peak Voltage (%)Reverse Instaneous Current( A)Reverse μ T =125J °C T =25J °C 0.2 0.4 0.6 0.8 1.0 0.0 25 50 75 100 125 150 175 Fig.1 Derating Curve Average Rectified Output Current Average Rectified Output Current (A) Ambient Temperature (°C) Resistive or Inductive Load 1.2 Fig.3 Typical Instaneous Forward Characteristics Instaneous Forward Current (A) 0.0 0.01 0.1 1.0 Instaneous Forward Voltage (V) T =25J °C pulse with 300μs 1% duty cycle Bridge Rectifier ABS1 ~ ABS10 (KBS1 ~ KBS10)