KBJ8A WTE | Alldatasheet
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Features
! Diffused Junction ! L o w F o r w a r d V o l t a g e D r o p A ! H i g h C u r r e n t C a p a b i l i t y G ! High Reliability ! H i g h S u r g e C u r r e n t C a p a b i l i t y B ! Ideal for Printed Circuit Boards C + ~ ~ - /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01H K D J E Mechanical Data P R R ! Case: Molded Plastic ! Terminals: Plated Leads Solderable per M MIL-STD-202, Method 208 N ! Polarity: As Marked on Body ! Weight: 4.0 grams (approx.) ! M o u n t i n g P o s i t i o n : A n y S ! M a r k i n g : T y p e N u m b e r G T L Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol KBJ8A KBJ8B KBJ8D KBJ8G KBJ8J KBJ8K KBJ8M Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage V R(RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current @T C = 75°C (Note 1) IO 8.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 200 A Forward Voltage (per element) @I F = 8.0A V FM 1.1 V Peak Reverse Current @T A = 25°C At Rated DC Blocking Voltage @T C = 100°C IR 200 µA Operating and Storage Temperature Range T j, TSTG -55 to +150 °C WTE POWER SEMICONDUCTORS KBJ-6 Dim Min Max A 29.7 30.3 B 19.7 20.3 C 4.7 4.9 D 17.0 18.0 E 3.8 4.2 G 3.1Ø 3.4Ø H 2.3 2.7 J 0.9 1.1 K 2.0 2.4 L 0.6 0.7 M 4.4 4.8 N 3.4 — P 9.8 10.2 R 7.3 7.7 S 10.8 11.2 T 2.6 — All Dimensions in mm
0.1 1.0 100 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Fwd Characteristics, per element F T = 25 Cj ° Pulse width = 300 sµ 1.4 100 150 200 1 10 100 I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current T= 2 5Cj ° Single half-sine-wave (JEDEC method) 25 50 75 100 125 150 I , AVERAGE RECTIFIED CURRENT (A)O T , TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve Resistive or Inductive load Heatsink 100 1 10 100 C , JUNCTION CAPACITANCE (pF)j V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R f = 1.0MHz T= 2 5Cj ° KBJ8A – KBJ8M 2 of 3 © 2002 Won-Top Electronics
KBJ8A – KBJ8M 3 of 3 © 2002 Won-Top Electronics
ORDERING INFORMATION
Product No. Package Type Shipping Quantity KBJ8A SIL Bridge 20 Units/Tube KBJ8B SIL Bridge 20 Units/Tube KBJ8D SIL Bridge 20 Units/Tube KBJ8G SIL Bridge 20 Units/Tube KBJ8J SIL Bridge 20 Units/Tube KBJ8K SIL Bridge 20 Units/Tube KBJ8M SIL Bridge 20 Units/Tube Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, W TE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in l ife support devices or systems without the express written approval. We power your everyday. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com