KBJ4A ZSELEC | Alldatasheet
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/c183Case: Molded Plastic /c183Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 /c183Polarity: Molded on Body /c183Mounting: Through Hole for #6 Screw /c183Mounting Torque: 5.0 in-lbs Maximum /c183Approx. Weight: 4.6 grams /c183Marking: Type Number Mechanical Data /c183Glass Passivated Die Construction /c183High Case Dielectric Strength of 1500VRMS /c183Low Reverse Leakage Current /c183Surge Overload Rating to 120A Peak /c183Ideal for Printed Circuit Board Applications /c183Plastic Material - UL Flammability Classification 94V-0 Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified A B D JK C E G H L M N P R KBJ4 Dim Min Max A 24.80 25.20 B 14.70 15.30 C 4.00 Nominal D 17.20 17.80 E 0.90 1.10 G 7.30 7.70 H 3.10 /c1983.40 /c198 J 3.30 3.70 K 1.50 1.90 L 9.30 9.70 M 2.50 2.90 N 3.40 3.80 P 4.40 4.80 R 0.60 0.80 All Dimensions in mm Characteristic Symbol KBJ KBJ KBJ KBJ KBJ KBJ KBJ 4M Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current @ T C = 115°C IO 4.0 A Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load (JEDECmethod) I FSM 120 A Forward Voltage per element @ IF = 2.0A VFM 1.0 V Peak Reverse Current @TC = 25°C at Rated DC Blocking Voltage @ TC = 125°C IRM 5.0 500 µA Typical Junction Capacitance per Element (Note 1) Cj 40 pF Typical Thermal Resistance (Note 2) R/c113JC 5.5 °C/W Operating and Storage Temperature Range Tj,T STG -65 to +150 °C Notes: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2. Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm aluminum plate heat sink. Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com KBJ4A - KBJ4M 1 of 2 Lead Free:: :For RoHS / Lead Free Version/c183 Alldatasheet
0.01 0.1 1.0 0 0.4 0.8 1.2 1.6 1.8 V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig.2 T ypical Forward Characteristics F I , INST ANT ANEOUS FORWARD CURRENT (A) F T = 150°CJ T = 25°CJ Pulse width = 300µs 120 160 180 1 10 100 I , PEAK FWD SURGE CURRENT (A) FSM NUMBER OF CYCLES A T 60 Hz Fig. 3 Max Non-Repetitive Sur ge Current T = 150°Cj Single half-sine-wave (JEDEC method) 100 1000 0.1 1.0 10 100 C , JUNCTION CAP ACITANCE (pF) j V , REVERSE VOL TAGE (V) Fig.4 T ypical Junction Capacitance R f=1 M Hz T = 25°Cj 0.1 1.0 100 1000 02 04 0 6 0 8 0 100 120 140 I , INST ANT ANEOUS REVERSE CURRENT (µA) R PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig.5 T ypical Reverse Characteristics T = 150°CJ T = 125°CJ T = 100°CJ T = 25°CJ 25 50 75 100 125 150 I , A VERAGE RECTIFIED CURRENT (A) O T , CASE TEMPERA TURE (°C) Fig. 1 Forward Current Derating Curve C Resistive or Inductive load 2 of 2 KBJ4A – KBJ4M Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com KBJ4A - KBJ4M Al. Substrate PC Board Alldatasheet