KBJ401 PFS | Alldatasheet
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- 低的反向漏电流 Low reverse leakage
- 较强的正向浪涌承受能力 High forward surge capability 机械数据 Mechanical Data 封装 塑料封装 Case: Molded Plastic 极性 标记模压或印于本体 Polarity: Symbols molded or marked on body 安装位置 任意 Mounting Position: Any 重量 : 4.6 克 Weight:4.6 Grams
- 浪涌承受能力：170 A S urge overload rating:170 Amperes peak KBJ401 KBJ402 KBJ403 KBJ404 KBJ406 KBJ408 KBJ410 GBJ401GBJ402 GBJ403 GBJ404 GBJ406 GBJ408 GBJ410 KBJ401 KBJ402 KBJ403 KBJ404 KBJ406 KBJ408 GBJ401GBJ402 GBJ403 GBJ404 GBJ406 GBJ408 KBJ410 GBJ410 塑封硅整流桥堆 反向电压 50---1000V 正向电流 4.0 A Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000 V Forward Current 4.0 A 4.0 加散热片 T C =108 无散热片 Ta=25 2.3 +~~- .995(25.3) .983(24.7) .134(3.4) .122(3.1) .057(1.45) .041(1.05) .083(2.1) .069(1.7) .043(1.1) .035(0.9) .303(7.7) .287(7.3) .303(7.7) .287(7.3) .074(1.9) .059(1.5) .146(3.7) .130(3.3) .303(7.7) .287(7.3) .708(18.0) .669(17.0) .157 (4.0) .602(15.3) .578(14.7) Unit inch mm .031(0.8) .023(0.6) .114(2.8) .098(2.5) .150(3.8) .134(3.4) .150(3.8) .134(3.4) .189(4.8) .173(4.4) .382(9.7) .366(9.3) .134(8.4) .122(3.1) 300 300 210
特性曲线 Characteristic Curves 正向特性曲线（典型值） 正向电压 V F (V) 环境温度 Ta( TYPICAL FORWARD CHARACTERISTIC FORWARD CURRENT DERATING CURVE V F Instantaneous Forward Voltage (V) Tamb, ambient temperature (°C) 正向电流降额曲线 正向电流 I F (A) 平均正向电流 I F(AV) (A) I F Instantaneous Forward Current (A) I F(A) Average Forward Rectified Current (A) 0.1 0 40 80 120 1600 2.0 4.0 1.0 3.0 +~~- P.C.B. on glass-epoxi substrate soldering land 5mmф sine wave R-load free in air 通过电流的周期 峰值正向浪涌电流 I FSM (A) 浪涌特性曲线（最大值） MAXIMUM NON REPETITIVE PEAK FORWARD SURGE CURRENT Number of Cycles at 60 Hz. I FSM Peak Forward Surge Current (A) 平均整流电流 I [A] FORWARD POWER DISSIPATION AVERAGE RECGIFIED FORWARD CURRENT I o (A) FORWARD POWER DISSIPATION P F (W)) 功率损耗曲线 功率损耗 P(W) 10 10002 5 2 0 5 0 100 200 Sine wave Tj=150℃ 16 27 34 环境温度 T C FORWARD CURRENT DERATING CURVE Case Temperature Tc(℃) 正向电流降额曲线 平均正向电流 I F(AV) (A) I F(A) Average Forward Rectified Current (A) 0 40 80 120 1600 3.0 6.0 1.5 4.5 +~ ~- Tc-sensing point sine wave R-load with heatsink Tc Pulse measurement per diode Tl=150℃ Tl=25℃ I FSM 10mS 10mS
1 Cycle
Tj=25 before