KBJ2A DSK | Alldatasheet
Document overview
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Technical content
+ ~ ~- 20± 0.55 11± 0.25 2.3± 0.2 18± 0.5 5.0± 0.3 1.2± 0.1 2.0± 0.25 3.5± 0.35 1.1± 0.25 0.6± 0.15
FEATURES
Surge overload rating to 50Am peres peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique results in inexpensive product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. KBJ KBJ KBJ KBJ KBJ 2M UNITS Maximum recurrent peak reverse voltage V RRM 200 400 600 800 1000 V Max imum RMS v oltage V RMS 140 280 420 560 700 V Max imum DC bloc king v oltage V DC 200 400 600 800 1000 V Maximum average forw ard Output current @T A =50 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage at 1.0 A V F V Maximum reverse current @T A =25 μA at rated DC blocking voltage @T A =100 mA Typical junction capacitance per element C J pF Typical thermal resistance R θJC Operating junction temperature range T J Storage temperature range T STG KBJ KBJ 50 100 1.0 2.Dev ice mounted on 300mm X 300mm X 1.6mm cu Plate heatsink. 1.0 A I F(AV) 2.0 A KBJ2A - - - KBJ2M SILICON BRIDGE RECTIFIERS 50.0 I FSM KBJ 2 100 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 2.0 A Lead solderable per MIL-STD-202 method 208 Polarity:Sym bols m olded on bo dy Mounting position: Any MECHANCAL DATA Weight:0.092 ounces, 2.334 gram s NOTES:1.Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC - 55 ---- + 150 - 55 ---- + 125 I R 2.2 10.0 Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
1.4 .01 .2 .4 .6 0.1 1.0.8 1.2 1.0 1.6 .1 .2 .4 1.0 2 4 10 20 40 1 100 120 140 160 200 T J =25 f=1MHz 0.5 05 0 1 00 1.5 150 2.5 AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES INSTANTANEOUS FORWARD CURRENT, PEAK FORWARD SURGE CURRENT, INST ANT ANEOUS FORWARD VOLT AGE, VOLT S REVERSE VOLT AGE,VOLT S KBJ2A - - - KBJ2M NUMBER OF CYCLES AT 60H Z AMBIENT T EMPERAT URE, FIG.3 -- TYPICAL FORWARD CHARACTERISTIC FIG.4 -- TYPICAL JUNCTION CAPACITANCE AMPERES JUNCTION CAPACITANCE,pF FIG.2 -- FORWARD DERATING CURVE FIG.1 -- PEAK FORWARD SURGE CURRENT T J =50℃ 8.3ms Single Half Sine-Wave 24 1081 0040 60 80 www.diode.kr Diode Semiconductor Korea