KBJ2A WTE | Alldatasheet

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! Diffused Junction ! L o w F o r w a r d V o l t a g e D r o p A ! H i g h C u r r e n t C a p a b i l i t y H ! High Reliability ! H i g h S u r g e C u r r e n t C a p a b i l i t y B ! Ideal for Printed Circuit Boards J G D K E M e c h a n i c a l D a t a P P P ! Case: Molded Plastic ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 C ! Polarity: As Marked on Body ! Weight: 2.0 grams (approx.) ! Mounting Position: Any ! Marking: Type Number L M Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol KBJ2A KBJ2B KBJ2D KBJ2G KBJ2J KBJ2K KBJ2M Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage V R(RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current @TA = 50°C I O 2.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 50 A I2t Rating for Fusing (t < 8.35ms) I 2t3 2 A 2s Forward Voltage (per diode) @IF = 1.0A V FM 1.0 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TC = 100°C IR 500 µA Typical Thermal Resistance (per leg) (Note 1) R/G01JA 47 K/W Typical Thermal Resistance (per leg) (Note 2) R/G01JC 10 K/W Operating and Storage Temperature Range T j, TSTG -55 to +150 °C Note: 1. Thermal resistance junction to ambient, mounted on PCB at 9.5mm lead length. WTE POWER SEMICONDUCTORS KBJ-2 Dim Min Max A 19.7 20.3 B 10.7 11.3 C 3.8 — D 13.0 14.0 E 2.3 2.7 G 1.65 — H 3.17 x 45° J 2.3 2.7 K 0.9 1.14 L 0.8 1.2 M —0 . 5 1 P 4.8 5.3 All Dimensions in mm

0.1 1.0 100 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Fwd Characteristics, per element F T = 25 Cj ° Pulse width = 300 sµ 1.4 1 10 100 I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current T= 2 5Cj ° Single half-sine-wave (JEDEC method) 25 50 75 100 125 150 I , AVERAGE RECTIFIED CURRENT (A)O T , TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve Resistive or Inductive load 100 1 10 100 C , JUNCTION CAPACITANCE (pF)j V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R f = 1.0MHz T= 2 5Cj ° KBJ2A – KBJ2M 2 of 3 © 2002 W on-Top Electronics

KBJ2A – KBJ2M 3 of 3 © 2002 Won-Top Electronics

ORDERING INFORMATION

Product No. Package Type Shipping Quantity KBJ2A SIL Bridge 50 Units/Tube KBJ2B SIL Bridge 50 Units/Tube KBJ2D SIL Bridge 50 Units/Tube KBJ2G SIL Bridge 50 Units/Tube KBJ2J SIL Bridge 50 Units/Tube KBJ2K SIL Bridge 50 Units/Tube KBJ2M SIL Bridge 50 Units/Tube Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, W TE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in l ife support devices or systems without the express written approval. We power your everyday. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com