KBJ10A WTE | Alldatasheet

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Features

! Diffused Junction ! L o w F o r w a r d V o l t a g e D r o p A ! H i g h C u r r e n t C a p a b i l i t y G ! High Reliability ! H i g h S u r g e C u r r e n t C a p a b i l i t y B ! Ideal for Printed Circuit Boards C + ~ ~ - H /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01J L D K E M e c h a n i c a l D a t a P P P ! Case: Molded Plastic ! Terminals: Plated Leads Solderable per M MIL-STD-202, Method 208 N ! Polarity: As Marked on Body ! Weight: 4.0 grams (approx.) ! M o u n t i n g P o s i t i o n : A n y R ! M a r k i n g : T y p e N u m b e r G S T Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol KBJ10A KBJ10B KBJ10D KBJ10G KBJ10J KBJ10K KBJ10M Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage V R(RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current @TC = 100°C @ T A = 25°C IO 3.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 170 A I 2t Rating for Fusing (t < 8.35ms) I 2t 120 A 2s Forward Voltage (per diode) @I F = 5.0A V FM 1.05 V Peak Reverse Current @T A = 25°C At Rated DC Blocking Voltage @T C = 100°C IR 5.0 500 µA Typical Thermal Resistance (Note 1) R /G01JC 2.5 °C/W Operating and Storage Temperature Range T j, TSTG -55 to +150 °C Note: 1. Thermal resistance junction to case, mounted on 150 x 150 x 1.6mm thick Cu plate heatsink. WTE POWER SEMICONDUCTORS KBJ-4 Dim Min Max A 24.7 25.3 B 14.7 15.3 C —4 . 0 D 17.0 18.0 E 3.3 3.7 G 3.1Ø 3.4Ø H 1.05 1.45 J 1.7 2.1 K 0.9 1.1 L 1.5 1.9 M 4.8 5.16 N 3.8 4.4 P 7.3 7.7 R 9.3 9.7 S 3.4 3.9 T 0.6 0.8 All Dimensions in mm

0.1 1.0 100 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Fwd Characteristics, per element F T = 25 Cj ° Pulse width = 300 sµ 1.4 120 160 1 10 100 I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current T= 2 5Cj ° Single half-sine-wave (JEDEC method) 25 50 75 100 125 150 I , AVERAGE RECTIFIED CURRENT (A)O T , TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve Resistive or Inductive load Heatsink 100 1 10 100 C , JUNCTION CAPACITANCE (pF)j V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R f = 1.0MHz T= 2 5Cj ° KBJ10A – KBJ10M 2 of 3 © 2002 Won-Top Electronics PC Board

KBJ10A – KBJ10M 3 of 3 © 2002 Won-Top Electronics

ORDERING INFORMATION

Product No. Package Type Shipping Quantity KBJ10A SIL Bridge 25 Units/Tube KBJ10B SIL Bridge 25 Units/Tube KBJ10D SIL Bridge 25 Units/Tube KBJ10G SIL Bridge 25 Units/Tube KBJ10J SIL Bridge 25 Units/Tube KBJ10K SIL Bridge 25 Units/Tube KBJ10M SIL Bridge 25 Units/Tube Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, W TE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in l ife support devices or systems without the express written approval. We power your everyday. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com