KBJ10A DAESAN | Alldatasheet

Document overview

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Technical content

Features

  • Glass Passivated Die Construction
  • High Case Dielectric Strength of 1500VRMS
  • Low Reverse Leakage Current
  • Surge Overload Rating to 170A Peak
  • Ideal for Printed Circuit Board Applications
  • Plastic Material - UL Flammability Classification 94V-0 Maximum Ratings And Electrical Characteristics
  • Case : Molded Plastic
  • Terminals : Plated Leads, Solderable per MIL-STD-202, Method 208
  • Polarity : Molded on Body
  • Mounting : Through Hole for #6 Screw
  • Mounting Torque : 5.0 in-Ibs Maximum
  • Weight : 6.6 grams (approx.)
  • Marking : Type Number (Ratings at 25¡É ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive load. For capacitive load, derate by 20%) CURRENT 10.0 Amperes VOLTAGE 50 to 1000 Volts Notes: (1) Non-repetitive, for t > 1.0ms and < 8.3ms. (2) Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC. (3) Thermal Resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink. Peak Repetitive Reverse voltage Working Peak Reverse voltage DC Blocking voltage RMS Reverse voltage Average Rectified Output Current @ TC=110 Non-Repetitive Peak Forward Surge Current, 8.3ms single half-sine-wave superimposed on rated load (JEDEC method) VoltsForward Voltage per element @ IF=5.0 A VRMM VRWM VR

50 Volts

1.05VFM VR(RMS) Amps 170IFSM Tj TSTG 500 -65 to +150 ¡É Amps Peak Reverse Current at Rated DC Blocking voltage I2t Rating for Fusing (t<8.3ms) (Note 1) Typical Junction Capacitance per element (Note 2) Operating and Storage Temperature Range KBJ 10A KBJ 10B KBJ 10D KBJ 10G KBJ 10J KBJ 10K KBJ 10M 120 100 200 140 400 280 600 420 800 560 1000

700 Volts

¥ìA A2S ¡É/W pF Io IR Cj I2t R¥èJA @ TC=25¡É @ TC=125¡É Typical Thermal Resistance, Junction to Case (Note 3) 4.0 B C D E EG H K J I L M N P R S A K B J Dim Min Max A 29.70 30.30 B 19.70 20.30 C 17.00 18.00 D 3.80 4.20 E 7.30 7.70 G 9.80 10.20 H 2.00 2.40 I 0.90 1.10 A ll Dimens ions in mm Dim Min Max 2.30 2.70

3.0 X 45

O 4.40 4.80 3.40 3.80 3.10 3.40 2.50 2.90 0.60 0.80 10.80 11.20 K J L M N P R S

RATINGS AND CHARACTERISTIC CURVES KBJ10A THRU KBJ10M 0.01 0.1 1.0 V , INS TANTANE OUS F OR WAR D V OLTAG E (V ) F ig. 2 Typical F orward C haracteristics (per element) F I , INS TANTANE OUS F OR WAR D C UR R E NT (A)F T = 25 CJ P ulse width = 300 s 120 160 180 1 10 100 I , P E AK F WD S UR G E C UR R E NT (A)F S M NUMB E R OF C YC LE S AT 60 Hz F ig. 3 Maximum Non-R epetitive S urge C urrent T = 150 CJ S ingle half-sine-wave (J E DE C method) 100 1 10 100 C , J UNC T ION C APAC ITANC E (pF )j V , R E V E R S E V OLTAG E (V ) F ig. 4 Typical J unction C apacitance R f = 1MHz T = 25 Cj 0.1 1.0 100 1000 0 20 40 60 80 100 120 140 I ,INSTANTANEOUS REVERSE CURRENT R P E R C E NT OF R AT E D P E AK R E V E R S E V OLTAG E (%) F ig. 5 Typical R everse C haracteristics T = 150 CJ T = 125 CJ T = 100 CJ T = 25 CJ 25 50 75 100 125 150 I , AV E R AG E R E C T IF IE D C UR R E NT (A)O T , C AS E T E MP E R AT UR E ( C ) F ig. 1 F orward C urrent Derating C urve C R esistive or Inductive load with heatsink without heatsink (µA)