KB411D KEXIN | Alldatasheet
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Technical content
Features
Small surface mounting type Low VF. (VF=0.43V Typ. at 0.5A) High reliability. Silicon epitaxial planar Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Reverse voltage V RM 40 V DC Reverse voltage V R 20 V Mean rectifying current I o 0.5 A Forward current surge peak I FSM 3A Junction temperature T j 125 Storage temperature T stg - 4 0t o+ 1 2 5 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit VF1I F=500mA 0.50 V VF2I F=10mA 0.30 V Reverse current I R1V R=10V 30 A Capacitance between terminal C T VR=10V , f=1MHz 20 pF Forwarad voltage www.kexin.com.cn Schottky Barrier Diode KB411D(RB411D)