2SK703 NEC | Alldatasheet
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NE C ELECTRONICS INC 58 DeBeye7ses oo1ssay s ffseq 0 7 ~39~y ee EE ge SES Se ee oy sart een ESOS ead tee ea a & RT pete ee # N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR Sra 2SK703 DESCRIPTION The 2SK703 is N-Channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp driver. PACKAGE DIMENSIONS in millimeters (inches) FEATURES © 4V Gate Drive — Logic level — @ Low Rosion) @ No Second Breakdown atx, aren 7702 | yyc9p Sauer ABSOLUTE MAXIMUM RATINGS renal | Azsge b Maximum Temperatures ee | E ; Maximum Power Dissipations Soyez | f Total Power Dissipation (Tc = 25°C)... 35 W ee) . | Maximum Voltages and Currents (Tg = 25 °C) [S82 : 5 1502 “PW 300 us, Duty Cycles 10 % on
2 Drain
ELECTRICAL CHARACTERISTICS (Ta = 25 °C) SYMBOL CHARACTERISTIC MIN. ‘TYP. MAX. UNIT TEST CONDITIONS Drain to Source On-State Roston) Resistance 0.20 0.45 2 Vas" 10V.Ip=5A Drain to Source On-State . .f =4V, . Rostont Resistance 0.26 0.50 a Ves Ip=5A Vestotf) Gate to Source Cutoff Voltage 10 25 Vv Vps= 10 V.Ip=1 ma Wvtst Forward Transter Admittance 40 s Vps = 10V. Ip =3A | Ipss Drain Leakage Current 10 uA Vps= 100 VV, Vgs 0 Igss Gate to Source Leakage Current £100 nA Vos = £20 V, Vps = 0 Ciss Input Capacitance 900 pF Vps = 10V Coss Output Capacitance 250 pF Vgs=0 Crss Reverse Transfer Capacitance 45 pF f= 1 MHz | tdlon) Turn-On Delay Time 10 ns | t Rise Time 40 ns Ip=3A. Voc s50V | taloff) Turn-Off Delay Time 110 ns Ae tion y Fall Time 30 ns NEC cannot assume any responsibility for any circuits snown oF represent thet they are free trom patent infringement. l 2 NEC Corporation :9¢¢
= TST INC WET ELECTRONICS Lt 35 Dy bie ’seb UULbsS U 1-39-11 a ERS a a SA agers et gel aor eR pV pa OD aa aoe ae Ry ee on Pas OS cas soe ease a Ree el ee emia ag RET, coecerencs NE C ELECTRONICS INC 58 DE b427525 0018885 O TYPICAL CHARACTERISTICS (Ta = 25°C) FORWARD BIAS SAFE TOTAL POWER DISSIPATION vs. DERATING FACTOR OE AREA ‘oe PERATING AREA RMBIENT TEMPERATURE 100} - ‘Oo é < lp RNG SX Wat. g 0 } < Fe OCR SI & 4 ‘T~ E ROE IRE 2 30 z Se Lay, 0.1) - ee orl single Pulse tog ORO THT TES TAD Te oT 7 ° ‘Te —Case Temperature—"C Vps~ Drain to Source Voltage—V Ta—Ambient Temperature—"C DRAIN CURRENT vs. DRAIN TO FORWARD TRANSFER SOURCE TO DRAIN DIODE sqnounce VouTAse o (gABMITTANGE st BRAIN CURRENT oq, FORWARD VOLTAGE WT 1 gz —— ——— . SSS Sar: i {ff & tA ES Bey efost | 2 § , | Gree wuearmecee § Ft Spt — Pres SESS 8! a Raa ee Se a ot a a Vpg Dram te Scurce Vo'teze-V Ip - Oran Current- A Vsp- Source te Dre~ vetege 3 id DRAIN TO SOURCE ON-STATE a DRAIN TO SOURCE ON-STATE CAPACITANCE vs. DRAIN TO «© RESISTANCE vs. GATE TO RESISTANCE vs. CHANNEL © sone SOURCE VOLTAGE —£ __ SOURCE VOLTAGE $ TEMPERATURE £ OP PPEES “Seite 2 | o£ Boot Ip:s Bo vss Ep te ep ob: S2o lS se g tes 1000p a a — & TT TT gif FREER Ris: god | --— tg th : 255 90) Mw: op sd «OG & z=: Polit SO Pitt op - f EEE 2 2 REESE oye —-————-, boys - - fe i TTP g ot 1; 8 ou $22 19H gée + 1 re ge F eS Fr a a sd ¥ps Drente Seurce Votzge V z Vgs Gate to Source Vortage - V g Ten Charne’ Temperature - © é é
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‘ . GATE TO SOURCE CUTOFF g DRAIN TO SOURCE ON-STATE > VOLTAGE vs. CHANNEL = RESISTANCE vs. DRAIN CURRENT 00, TRANSFER CHARACTERISTIC TEMPERATURE aa Pulsed 100 SSS SS Vs= 10} & WET TeV Bo foo a ie a oe g 0a} ——- = « Poo = = oat —— é = —— g H Aigs=10 V. A a 8 -- °. 4 3 pb ---—— + Seer ee $19 a i of 2 —— SS & . § 811 Tro " T a 0 zo Tes Oe B Ip- Drain Current- A VGs—Gate to Source Voltage—V > Teh— Channel Temperature C £ SWITCHING CHARACTERISTICS , N00 ese vce= 50 v
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SWITCHING TIME TEST CIRCUIT b ! RL gue te Vos v 9 but Voge | 922 (GSion)} i | Wovetorm - i T voc Re 'p Ea : Drain ioe Hs : th Current 0 ° i \\, Wavetorm| i. | i, tor te I eo Dez, Cre ot