K5630 KODENSHI | Alldatasheet

Document overview

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Technical content

FEATURES

  • Switching Time - Type 3§Á
  • Collector-Emitter Voltage : Min.35V
  • Current Transfer Ratio : Typ.10% (at IF= 10mA, VCE=10V)
  • Electrical Isolation Voltage : AC5000Vrms
  • Without Base Connection - K5630
  • With Base Connection - K5631
  • UL Recognized File No. E107486

APPLICATIONS

  • Interface between two circuits of different potential
  • Telephone set & line interface
  • I/O compatible with integrated circuits MAXIMUM RATINGS (Ta=25¡É ) ** Except for K5630 *1. Input current with 100§Á pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec
  • AC signal input Emitter-Base Breakdown Voltage** BVEBO 6 V mW Parameter Symbol Rating Unit Input Forward Current IF ¡¾60 Total Power Dissipation Peak Forward Current *1 IFP ¡¾ 1 Ptot 200 Output Collector-Emitter Breakdown Voltage BVCEO 35 mA A Power Dissipation PD 70 mW Emitter-Collector Breakdown Voltage BVECO 6 Collector-Base Breakdown Voltage** BVCBO 70 Collector Current IC 50 mA 150 mW V V V Input to Output Isolation Voltage *2 Viso AC5000 Vrms -30~+100 ¡É Storage Temperature Tstg -55~+125 ¡É Collector Power Dissipation PC Lead Soldering Temperature*3 Tsol Operating Temperature Topr 260 ¡É K5630 • K5631 These Photocouplers consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Phototransistor in a 6-pin package. DIMENSION (Unit : mm) 321 6 5 4 456 1 2 3 PIN NO. AND INTERNAL CONNECTION DIAGRAM K5630 K5631

ELECTRO-OPTICAL CHARACTERISTICS (Ta=25¡É , unless otherwise noted) IF= 10mA V=0, f=1MHz IC=1mA IE=0.1mA IC=0.1mA IC=0.1mA IF=0, VCE=10V VCE=0, f=10MHz IF= 10mA, IC=0.5mA V=0, f=1MHz VCE=5V, RL=100 IC=2mA *4. CTR=(IC/IF) X 100 (%) CTR Symmetry Except for K5630 CTR1/CTR2 0.33 - 1.30 Min. ICEO - - BVEBO 6 - V V V70 Collector-Base Breakdown Voltage Input-Output Isolation Resistance Input-Output Capacitance Capacitance Current Transfer Ratio*4 Collector-Emitter Saturation Voltage CCE CIO Input Output Forward Voltage Capacitance Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector Dark Current Emitter-Base Breakdown Voltage ** 200 100 nA - V - §Á - §Á pF V pF tr IO Unit. pF Symbol VF Max. 0.4 - §Ù Typ. 1.15 V K5630 • K5631 Parameter 1011 10- Coupled Rise Time Fall Time Condition tf C T CTR IF= 10mA, VCE=10V RH=40~60%, V=500V BVCEO VCE(SAT) BVECO BVCBO 3.0

K5630 • K5631 Ambient Temperature Ta (¡É ) Forward Current vs. Ambient Temperature -20 0 20 Forward Current IF (mA) Collector Current vs. Forward Current Forward Current IF (mA) 40 60 100 0.1 1 Collector Current IC (mA) 0.1 100 Collector-Emitter Voltage VCE (V) Collector Current vs. Collector-Emitter Voltage 0 2 4 6 Collector Current IC (mA) 8 10 Dark Current ICEO (§Ë) Ambient Temperature Ta (¡É ) 0.001 0.01 4020 0.1 8060 100 Dark Current vs. Ambient Temperature Collector Power Dissipation vs. Ambient Temperature Collector Power Dissipation PC (mW) -20 100 150 200 250 Ambient Temperature Ta (¡É ) 200 6040 10080 100 0.001 0.01 Collector Current IC (mA) 0 4020 8060 Ambient Temperature Ta (¡É ) Collector Current vs. Ambient Temperature 100 Output Input Test Circuit VIN R RL VO VCC Waveform 10% 90% Switching Time Test Circuit tr tf -20 Ta=25¡É IF=30mA IF=20mA IF=10mA IF=5mA IF=1mA PC(max.) VCE=10V IF=20mA IF=10mA IF=5mA IF=1mA Ta=25¡É VCE=10V Ta=-55¡É 0.4 Forward Voltage VF (V) Forward Current IF (mA) 100 0.8 1.2 Ta=70¡É Ta=25¡É Forward Current vs. Forward Voltage 1.6 Response Time tr, tf (¥ìs) 0.1 Load Resistance RL (§Ú) 0.1 1.0 2.0 VCE=5V IC=2mA Ta=25¡É 500 100 Response Time vs. Load Resistance tr tf