K5620 KODENSHI | Alldatasheet

Document overview

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Technical content

FEATURES

  • Collector-Emitter Voltage : Min.35V
  • Current Transfer Ratio : Typ.500% (at IF=1mA, VCE=2V)
  • Electrical Isolation Voltage : AC5000Vrms
  • UL Recognized File No. E107486

APPLICATIONS

  • Interface between two circuits of different potential
  • Automatic Vending Machine
  • Power Supply Regulators MAXIMUM RATINGS (Ta=25¡É ) ** Except for K5620 *1. Input current with 100§Á pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec
  • Telephone Line Receiver Symbol Reverse Voltage VR 5 Power Dissipation PD 150 Rating package. K5620 • K5621 These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN PhotoDarlington transistor in a 6-pin mW 260 ¡É Collector Power Dissipation PC Lead Soldering Temperature*3 Tsol Operating Temperature Topr -30~+100 ¡É Storage Temperature Tstg -55~+125 ¡É Input to Output Isolation Voltage*2 Viso AC5000 Vrms 150 mW V V V Collector Current I C 50 mA Emitter-Collector Breakdown Voltage BVECO 6 Collector-Base Breakdown Voltage** BVCBO 35 BVCEO 35 125 Unit Input Forward Current IF 60 mA A Junction Temperature TJ Parameter mWPtot 200 V Total Power Dissipation Peak Forward Current *1 IFP 1 Output Collector-Emitter Breakdown Voltage DIMENSION (Unit : mm) 321 6 5 4 456 1 2 3 PIN NO. AND INTERNAL CONNECTION DIAGRAM K5620 K5621

ELECTRO-OPTICAL CHARACTERISTICS (Ta=25¡É , unless otherwise noted) IF=10mA VR=5V V=0, f=1MHz IC=1mA IE=0.1mA IC=0.1mA IF=0, VCE=10V VCE=0, f=1MHz IF=1mA, IC=2mA V=0, f=1MHz VCE=10V, RL=100§Ù IC=2mA ** Except for K5620 *4. CTR=(IC/IF) X 100 (%) CTR IF=1mA, VCE=2V RH=40~60%, V=500V BVCEO VCE(SAT) BVECO BVCBO Coupled Rise Time Fall Time Condition tf CT - 100 1011 10- Typ. 1.15 V K5620 • K5621 Parameter Unit. Input pF Symbol VF Max. 1.30 10 §Ë tr -RIO 0.85 100- - §Á - §Á pF V pF 1.0 100 nA 500 - §Ù Output Forward Voltage Capacitance Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector Dark Current Collector-Base Breakdown Voltage ** Input-Output Isolation Resistance Input-Output Capacitance Capacitance Current Transfer Ratio Collector-Emitter Saturation Voltage CCE CIO V V V35 -35 - ICEO - - Min. - Reverse Current IR -

K5620 • K5621 Ambient Temperature Ta (¡É) Forward Current vs. Ambient Temperature -20 0 20 Forward current IF (mA) 40 60 100 Collector-Emitter Voltage VCE (V) Collector Current vs. Collector-Emitter Voltage 0 2 4 6 Collector Current IC (mA) 8 10 Dark Current ICEO (uA ) Ambient Temperature Ta (¡É) 0.001 0.01 4020 0.1 8060 100 Dark Current vs. Ambient Temperature Output Input Test Circuit VIN R RL VO VCC Waveform 10% 90% Switching Time Test Circuit tr tf Collector Current IC (mA) Forward Current IF (mA) 1 3 5 7 119 Collector Current vs. Forward Current 20 ~ 100 Collector Power Dissipation PC (mW) Collector Power Dissipation vs. Ambient Temperature 250 Ambient Temperature Ta (¡É) 0-20 150 100 200 8060 100 Forward Voltage VF (V) 0.4 100 120 140 Forward Current IF (mA) 1.20.8 1.6 2.0 Ta=70¡É Ta=25¡É Ta=-55¡É Forward Current vs. Forward Voltage IF=3mA IF=2.5mA IF=2mA IF=1.5mA IF=0.5mA IF=1mA PC(max.) VCE=24V VCE=10V Ta=25¡É Ta=25¡É VCE=2V