K5610 KODENSHI | Alldatasheet
Document overview
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Technical content
FEATURES
- TTL Compatible Output
- Collector-Emitter Voltage : Min.70V
- Current Transfer Ratio : Typ.50% (at IF=5mA, VCE=5V)
- Electrical Isolation Voltage : AC5000Vrms
- UL Recognized File No. E107486
APPLICATIONS
- Interface between two circuits of different potential
- Vending Machine, Copiers
- Measuring Instrument
- Home Appliances MAXIMUM RATINGS (Ta=25¡É ) ** Except for K5610 *1. Input current with 100§Á pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec K5610 • K5611 These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package. 260 ¡É Collector Power Dissipation PC Lead Soldering Temperature*3 Tsol Operating Temperature Topr -30~+100 ¡É Storage Temperature Tstg -55~+125 ¡É Input to Output Isolation Voltage*2 Viso AC5000 Vrms 150 mW V V V Collector Current I C 50 mA Emitter-Collector Breakdown Voltage BVECO 7 Collector-Base Breakdown Voltage** BVCBO 80 mA V A Power Dissipation P D 70 mW Reverse Voltage VR 5 Total Power Dissipation Peak Forward Current *1 IFP 1 Ptot 200 Output Collector-Emitter Breakdown Voltage BVCEO 70 Input Forward Current IF 50 Parameter Symbol Rating Unit mW DIMENSION (Unit : mm) K5610 K5611 PIN NO. AND INTERNAL CONNECTION DIAGRAM 321 6 5 4 456 1 2 3
ELECTRO-OPTICAL CHARACTERISTICS (Ta=25¡É , unless otherwise noted) IF=10mA VR=5V - V=0, f=1MHz IC=1mA IE=0.1mA IC=0.1mA IF=0, VCE=24V VCE=0, f=1MHz IF=5mA, IC=1mA V=0, f=1MHz VCE=10V, RL=100§Ù IC=2mA ** Except for K5610 *4. CTR=(IC/IF) X 100 (%) CTR IF=5mA, VCE=5V RH=40~60%, V=500V BVCEO VCE(SAT) BVECO BVCBO Coupled Rise Time Fall Time Condition tf CT 1011 10- - §Ù Typ. 1.15 V K5610 • K5611 Parameter 0.3 Unit. pF Symbol VF tr -RIO - §Á - §Á pF V pF 600 Input Output Forward Voltage Capacitance Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Base Breakdown Voltage ** Input-Output Isolation Resistance Input-Output Capacitance Capacitance Current Transfer Ratio Collector-Emitter Saturation Voltage CCE CIO 100 nA Reverse Current IR V V V80 Collector Dark Current ICEO - - - 10 §Ë Max. 1.30 Min.
K5610 • K5611 Ambient Temperature Ta (¡É ) Forward Current vs. Ambient Temperature -20 0 20 Forward Current IF (mA) 40 60 100 Collector-Emitter Voltage VCE (V) Collector Current vs. Collector-Emitter Voltage 0 2 4 6 Collector Current IC (mA) 8 10 Dark Current ICEO (§Ë) Ambient Temperature Ta (¡É) 0.001 0.01 4020 0.1 8060 100 Dark Current vs. Ambient Temperature Collector Power Dissipation vs. Ambient Temperature Collector Power Dissipation PC (mW) -20 100 150 200 250 Ambient Temperature Ta (¡É ) 200 6040 10080 Collector Current IC (mA) 0 4020 8060 Ambient Temperature Ta (¡É ) Collector Current vs. Ambient Temperature 100 Output Input Test Circuit VIN R RL VO VCC Waveform 10% 90% Switching Time Test Circuit tr tf -20 Ta=25¡É IF=30mA IF=20mA IF=10mA IF=5mA IF=1mA PC(max.) VCE=24V IF=20mA IF=10mA IF=5mA IF=1mA Ta=-55¡É 0.4 Forward Voltage VF (V) Forward Current IF (mA) 100 0.8 1.2 Ta=70¡É Ta=25¡É Forward Current vs. Forward Voltage 1.6 Collector Current IC (mA) Response Time tr, tf (¥ìs) 0.1 Load Resistance RL (§Ú) 0.1 1.0 5.0 Forward Current IF (mA) 0.1 0.001 0.01 1 10 100 VCE=10V IC=2mA Ta=25¡É 500 100 Response Time vs. Load Resistance tr tf Collector Current vs. Forward Current Ta=25¡É VCE=5V 0.1 100