K4N36

K4N35 KODENSHI | Alldatasheet

Document overview

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Technical content

FEATURES

• Switching Time - Typ. 3µs
• Collector-Emitter Voltage : Min.30V
• Current Transfer Ratio : Typ.100% (at IF=10mA, VCE=10V)
• Electrical Isolation Voltage : AC2500Vrms
• UL Recognized File No. E107486

APPLICATIONS

• Interface between two circuits of different potential
• Traffic Controller System
• Programmable Controller MAXIMUM RATINGS (Ta=25¡É ) *1. Input current with 100µs pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec *4. Customer Option mW Input to Output Isolation Voltage*2 Parameter Symbol Rating Unit Input Forward Current IF 60 Total Power Dissipation Peak Forward Current *1 IFP 3 Ptot 200 mA V A Power Dissipation PD 70 mW Reverse Voltage VR 5 Emitter-Collector Breakdown Voltage BVECO 6 Collector-Base Breakdown Voltage BVCBO 70 V V V Collector Current I C 50 mA Collector-Emitter Breakdown Voltage BVCEO 35 *4 Collector Power Dissipation PC 150 mW
• Vending Machine, Voltage Regulator Operating Temperature Topr -30~+100 ¡É AC2500 Storage Temperature Tstg -55~+125 ¡É Output Lead Soldering Temperature*3 Tsol 260 ¡É K4N35 •K4N36 •K4N37 These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in 6-pin package. Viso Vrms DIMENSION (Unit : mm) 6.4 0.25 8.9 0.25 2.54 0.25 1 2 3 1.2 0.5 3.8 0.252.7Min. 0.51Min. 7.62 0.25 6.4 0.25 0 -15 6 5 4 Orientation Mark 321 6 5 4 PIN NO. AND INTERNAL CONNECTION DAGRAM

ELECTRO-OPTICAL CHARACTERISTICS (Ta=25¡É , unless otherwise noted) IF=10mA VR=5V - V=0, f=1MHz IC=1mA IE=0.1mA IC =0.1mA IF=0, VCE=10V VCE=0, f=1MHz IF=10mA, IC=0.5mA V=0, f=1MHz VCC=10V, RL=100§Ù IC=2mA *5. CTR=(IC/IF) X 100 (%) - 10 §Ë Collector Dark Current ICEO - - 50 nA Reverse Current IR Collector-Base Breakdown Voltage Input-Output Isolation Resistance Input-Output Capacitance Capacitance Current Transfer Ratio*5 Collector-Emitter Saturation Voltage CCE CIO Input Output Forward Voltage Capacitance Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage V V V70 10 ¡É 10 ¡É pF V pF Symbol V F tr -RIO 0.15 Max. 1.30 Unit. pF 0.3 - ¡É Typ. 1.15 V K4N35 •K4N36 •K4N37 Parameter Min. 100 1011 10- Coupled Rise Time Fall Time Condition tf CT CTR IF=10mA, VCE=10V RH=40~60%, V=500V BVCEO VCE(SAT) BVECO BVCBO Photocoupler

K4N35 • K4N36 • K4N37 Ambient Temperature Ta (¡É ) Forward Current vs. Ambient Temperature -20 0 20 Forward Current IF (mA) 40 60 100 Collector-Emitter Voltage VCE (V) Collector Current vs. Collector-Emitter Voltage 0 2 4 6 Collector Current IC (mA) 8 10 Dark Current ICEO (§Ë) Ambient Temperature Ta (¡É ) 0.001 0.01 4020 0.1 8060 100 Dark Current vs. Ambient Temperature Collector Power Dissipation vs. Ambient Temperature Collector Power Dissipation PC (mW) -20 100 150 200 250 Ambient Temperature Ta (¡É ) 200 6040 10080 Output Input Test Circuit VIN R RL VO VCC Waveform 10% 90% Switching Time Test Circuit tr tf Ta=25¡É IF=30mA IF=20mA IF=10mA IF=5mA IF=1mA VCE=10V IF=20mA Collector Current vs. Ambient Temperature IF=1mA Ambient Temperature Ta (¡É ) -20 0 4020 60 100 Collector Current IC (mA) IF=5mA IF=10mA Collector Current IC (mA) Forward Current IF (mA)Forward Current IF (mA) 0.1 0.001 0.01 1 10 100 Collector Current vs. Forward Current Ta=25¡É VCE=10V 0.1 100 Response Time tr, tf (¥ìs) 0.1 Load Resistance RL (§Ú) 0.1 1.0 5.0 VCE=10V IC=2mA Ta=25¡É 500 100 Response Time vs. Load Resistance tr tf Ta=-55¡É Forward Voltage VF (V) 0.4 Forward Current IF (mA) 100 0.8 1.2 Ta=25¡É Ta=70¡É Forward Current vs. Forward Voltage 1.6