K4N27

K4N27 KODENSHI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 3

Technical content

FEATURES

• Switching Time - Typ. 3§Á
• Collector-Emitter Voltage : Min.30V
• Current Transfer Ratio : Typ.100% (at IF=10mA, VCE=10V)
• Electrical Isolation Voltage : AC2500Vrms
• UL Recognized File No. E107486

APPLICATIONS

• Interface between two circuits of different potential
• Traffic Controller System
• Programmable Controller MAXIMUM RATINGS (Ta=25¡É ) *1. Input current with 100§Á pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec *4. Customer Option Total Power Dissipation Ptot 200 mW Parameter Symbol Rating Unit Input Forward Current IF 80 Reverse Voltage VR 5 Peak Forward Current *1 IFP 3 mA V A Power Dissipation PD 70 mW Output Collector-Emitter Breakdown Voltage BVCEO 35 *4 Emitter-Collector Breakdown Voltage BVECO 6 Collector-Base Breakdown Voltage BVECO 70 V V V Collector Current I C 100 mA Collector Power Dissipation PC 70 mW Input to Output Isolation Voltage*2 Viso AC1500 Vrms Storage Temperature Tstg -55~+125 ¡É
• Vending Machine, Voltage Regulator Operating Temperature Topr -30~+100 ¡É Lead Soldering Temperature*3 Tsol 260 ¡É K4N27 These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package. DIMENSION (Unit : mm) 6.4 0.25 8.9 0.25 2.54 0.25 1 2 3 1.2 0.5 3.8 0.252.7Min. 0.51Min. 7.62 0.25 6.4 0.25 0 -15 6 5 4 Orientation Mark 321 6 5 4

ELECTRO-OPTICAL CHARACTERISTICS (Ta=25¡É , unless otherwise noted) IF=10mA VR=5V V=0, f=1MHz IC=1mA IE=0.1mA IC =0.1mA IF=0, VCE=10V VCE=0, f=1MHz IF=50mA, IC=1mA V=0, f=1MHz VCE=5V, RL=100 IC=2mA *5. CTR=(IC/IF) X 100 (%) - 10 §Ë Collector Dark Current ICEO - - 100 nA Reverse Current IR - Collector-Base Breakdown Voltage Input-Output Isolation Resistance Input-Output Capacitance Capacitance Current Transfer Ratio*5 Collector-Emitter Saturation Voltage CCE CIO Input Output Forward Voltage Capacitance Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage V V V70 pF V pF Symbol V F tr -RIO 0.15 Max. 1.30 Unit. pF 0.4 - §Ù 3- - §Á Typ. 1.15 V K4N27 Parameter - §Á Min. 1011 10- Coupled Rise Time Fall Time Condition tf CT CTR IF=10mA, VCE=10V RH=40~60%, V=500V BVCEO VCE(SAT) BVECO BVCBO

Ambient Temperature Ta (¡É ) Forward Current vs. Ambient Temperature -20 0 20 Forward Current IF (mA) 40 60 10080 Dark Current ICEO (§Ë) Ambient Temperature Ta (¡É ) 0.001 0.01 4020 0.1 8060 100 Dark Current vs. Ambient Temperature Collector Power Dissipation vs. Ambient Temperature Collector Power Dissipation PC (mW) -20 100 150 200 250 Ambient Temperature Ta (¡É ) 200 6040 10080 Output Input Test Circuit VIN R RL VO VCC Waveform 10% 90% Switching Time Test Circuit tr tf VCE=10V IF=20mA Collector Current vs. Ambient Temperature IF=1mA Ambient Temperature Ta (¡É ) -20 0 4020 60 100 Collector Current IC (mA) IF=5mA IF=10mA Ta=25¡É VCE=10V Collector Current IC (mA) Forward Current IF (mA) 0.1 0.001 0.01 0.1 10 100 Collector Current vs. Forward Current 100 Ta=25¡É Collector Current vs. Collector-Emitter Voltage Collector current IC (mA) Collector-Emitter voltage VCE (V) 2 4 6 10 IF=1mA IF=20mA IF=30mA IF=10mA IF=5mA PC(MAX.) Ta=-55¡É 100 Forward Voltage VF (V) 0.4 Forward Current IF (mA) 0.8 1.2 Ta=25¡É Ta=70¡É Forward Current vs. Forward Voltage 1.6 VCE=5V IC=2mA Ta=25¡É 500 Response Time tr, tf (¥ìs) 0.1 100 Load Resistance RL (§Ú) 0.1 tr 1.0 2.0 tf Forward Current IF (mA) Response Time vs. Load Resistance