K4111

2SK4111 TOSHIBA | Alldatasheet

Document overview

• Manufacturer or author: TOSHIBA Semiconductor
• PDF pages: 6

Technical content

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4111 Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.)
• High forward transfer admittance: |Yfs| = 8.5S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 kΩ) V DGR 600 V Gate-source voltage VGSS ±30 V DC (Note 1) I D 10 Drain current Pulse (t = 1 ms) (Note 1) IDP 40 A Drain power dissipation (Tc = 25°C) PD 45 W Single pulse avalanche energy (Note 2) EAS 363 mJ Avalanche current IAR 10 A Repetitive avalanche energy (Note 3) E AR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods“) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R th (ch-c) 2.78 °C/W Thermal resistance, channel to ambient R th (ch-a) 62.5 °C/W Note 1: Ensure that the channel temperature does not exceed 150 ℃. Note 2: V DD = 90 V, Tch = 25°C(initial), L = 6.36 mH, IAR = 10 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm JEDEC — JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.9 g (typ.)

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA Gate-source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V Drain cut-off current IDSS V DS = 600 V, VGS = 0 V ⎯ ⎯ 100 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V Gate threshold voltage Vth V DS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) V GS = 10 V, ID = 5 A ⎯ 0.54 0.75 Ω Forward transfer admittance ⎪Yfs⎪ V DS = 10 V, ID = 5 A 2.4 8.5 ⎯ S Input capacitance Ciss ⎯ 1500 ⎯ Reverse transfer capacitance Crss ⎯ 15 ⎯ Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 180 ⎯ pF Rise time tr ⎯ 22 ⎯ Turn-on time ton ⎯ 50 ⎯ Fall time tf ⎯ 36 ⎯ Switching time Turn-off time t off ⎯ 180 ns Total gate charge Qg ⎯ 42 ⎯ Gate-source charge Qgs ⎯ 23 ⎯ Gate-drain charge Qgd VDD ≈ 400 V, VGS = 10 V, ID = 10 A ⎯ 19 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 10 A Pulse drain reverse current (Note 1) I DRP ⎯ ⎯ ⎯ 40 A Forward voltage (diode) VDSF I DR = 10 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr ⎯ 1300 ⎯ ns Reverse recovery charge Qrr IDR = 10 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 16 ⎯ μC Marking RL = 40 Ω 0 V 10 V VGS VDD ≈ 200 V ID = 5 A VOUT 50 Ω Duty ≤ 1%, tw = 10 μs Lot No. A line indicates Lead (Pb)-Free Finish K4111 Part No. (or abbreviation code)

Tc = −55°C 100 ID = 10 A 4 8 12 16 20 2.5 0.1 0.1 1 10 100 VGS = 10 V､15V 0.1 100 0.1 1 100 100 Tc = −55°C 0 2 4 6 8 VGS = 4V 4.2 4.6 4.4 4.8 10,8 5.1 5.3 0 20 50 VGS = 4 V 4.5 4.75 5.25 5.5 40 30 10 DRAIN-SOURCE VOLTAGE V DS (V) ID – VDS DRAIN CURRENT I D (A) COMMON SOURCE Tc = 25°C PULSE TEST DRAIN CURRENT I D (A) RDS (ON) – ID DRAIN-SOURCE ON RESISTANCE RDS (ON) ( Ω) COMMON SOURCE Tc = 25°C PULSE TEST DRAIN CURRENT I D (A) ⎪Yfs⎪ – ID COMMON SOURCE VDS = 20 V PULSE TEST FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) DRAIN-SOURCE VOLTAGE V DS ( V ) ID – VDS DRAIN CURRENT I D (A) COMMON SOURCE Tc = 25°C PULSE TEST GATE-SOURCE VOLTAGE V GS ( V ) ID – VGS DRAIN CURRENT I D (A) COMMON SOURCE VDS = 20 V PULSE TEST DRAIN-SOURCE VOLTAGE V DS (V) GATE-SOURCE VOLTAGE V GS (V) VDS – VGS COMMON SOURCE Tc = 25℃ PULSE TEST

0.1 100 1000 10000 1 10 100 Ciss Coss Crss −80 −40 0 40 80 120 160 0 40 80 120 160 200 0.1 −0.2 100 −0.6 −0.8 −1.2 VGS = 0, −1 V −0.4 −1.0 DRAIN-SOURCE VOLTAGE V DS (V) CAPACITANCE – VDS CAPACITANCE C (pF) COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25°C DRAIN POWER DISSIPATION PD (W) CASE TEMPERATURE Tc (°C) PD – Tc DRAIN-SOURCE VOLTAGE V DS (V) IDR – VDS DRAIN REVERSE CURRENT I DR (A) COMMON SOURCE Tc = 25°C PULSE TEST GATE THRESHOLD VOLTAGE Vth (V) CASE TEMPERATURE Tc (°C) Vth – Tc COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST CASE TEMPERATURE Tc (°C) RDS (ON) – Tc DRAIN-SOURCE ON RESISTANCE RDS (ON) ( Ω) 160 −40 0 40 80 120 −80 2.5 2.0 1.5 1.0 0.5 ID = 10A 2.5A VGS = 10 V COMMON SOURCE PULSE TEST GATE-SOURCE VOLTAGE V GS (V) TOTAL GATE CHARGE Q g ( n C ) DYNAMIC INPUT / OUTPUT CHARACTERISTICS DRAIN-SOURCE VOLTAGE V DS (V) 0 10 40 VDD = 100 V VDS VGS 400 200 Common source ID = 10 A Tc = 25°C Pulse test VDS VGS 50 60 500 200 100 300 400 30 20

25 50 75 100 125 150 0.1 100 10 1000100 VDSS max 0.01 CHANNEL TEMPERATURE (INITIAL) Tch ( ° C ) EAS – Tch AVALANCHE ENERGY EAS ( m J ) −15 V 15 V TEST CIRCUIT WAVE FORM IAR BVDSS VDD V DS RG = 25 Ω VDD = 90 V, L = 6.36mH ⎟⎟ −⋅ ⋅ ⋅ = VDDBVDSS BVDSS2I L2 1ΕAS DRAIN-SOURCE VOLTAGE V DS (V) SAFE OPERATING AREA ※ SINGLE NONREPETITIVE PULSE T c = 2 5℃ CURVES MUST BE DERA TED LINEARLY WITH INCREASE IN TEMPERA TURE. ID max (PULSED) * ID max (CONTINUOUS) * DC OPERATION Tc = 25°C 100 μs * 1 ms * DRAIN CURRENT I D (A)

RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL

• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
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