2SK4108 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( π-MOS VI) 2SK4108 Switching Regulator Applications z Low drain−source ON resistance : R DS (ON) = 0. 21Ω (typ.) z High forward transfer admittance : |Y fs| = 14 S (typ.) z Low leakage current : I DSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : V th = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage VDSS 500 V Drain−gate voltage (RGS = 20 kΩ) V DGR 500 V Gate−source voltage V GSS ±30 V DC (Note 1) I D 20 A Drain current Pulse (Note 1) I DP 80 A Drain power dissipation (Tc = 25°C) P D 150 W Single-pulse avalanche energy (Note 2) EAS 960 mJ Avalanche current IAR 20 A Repetitive avalanche energy (Note 3) E AR 15 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R th (ch−c) 0.833 °C / W Thermal resistance, channel to ambient Rth (ch−a) 50 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: V DD = 90 V, Tch = 25°C (initial), L = 4.08 mH, RG = 25 Ω, IAR = 20 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC ― JEITA ― TOSHIBA 2-16C1B Weight: 4.6 g (typ.)

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±25 V, VDS = 0 V — — ±10 μA Gate−source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 — — V Drain cutoff current IDSS VDS = 500 V, VGS = 0 V — — 100 μA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 500 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 — 4.0 V Drain−source ON resistance R DS (ON) V GS = 10 V, ID = 10 A — 0.21 0.27 Ω Forward transfer admittance |Y fs| V DS = 10 V, ID = 10 A 4.0 14 — S Input capacitance Ciss — 3400 — Reverse transfer capacitance C rss — 25 — Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz — 320 — pF Rise time tr — 70 — Turn on time t on — 130 — Fall time tf — 70 — Switching time Turn off time t off — 280 — ns Total gate charge (gate−source plus gate−drain) Qg — 70 — Gate−source charge Q gs — 45 — Gate−drain (“Miller”) charge Q gd VDD ≈ 400 V, VGS = 10 V, ID = 20 A — 25 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 20 A Pulse drain reverse current (Note 1) I DRP — — — 80 A Forward voltage (diode) VDSF I DR = 20 A, VGS = 0 V — — −1.7 V Reverse recovery time trr — 1300 — ns Reverse recovery charge Qrr IDR = 20 A, VGS = 0 V dIDR / dt = 100 A / μs — 20 — μC Marking RL = 20 Ω VDD ∼ − 200 V 0 V VGS 10 V 50 Ω ID = 10A 出力 Duty < = 1%, tw = 10 μs K4108 TOSHIBA Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code)

VGS = 4V 4.5 5.25 5.5 Common source Tc = 25°C Pulse Test ID – VDS ID – VDS ID – VGS VDS – VGS 20 30 40 50 01 0 8 12 16 20 2 3 4 50 1 4 8 0 2 106 Common source VDS = 20 V Pulse Test Tc = −55°C 100 |Yfs| – ID 10 100 100 Common source VDS = 20 V Pulse Test Tc = −55°C 100 RDS (ON) – ID 11 0 1 00 0.1 1.0 Common source Tc = 25°C VGS = 10 V Pulse Test Drain-source voltage V DS ( V ) Drain current I D ( A ) Drain-source voltage V DS ( V ) Drain current I D ( A ) Gate-source voltage V GS ( V ) Drain current ID (A) Gate-source voltage V GS ( V ) Drain current I D (A) Drain current I D (A) Drain-source ON resistance RDS (ON) ( Ω) Drain-source voltage V DS (V) Forward transfer admittance ⎪Yfs⎪ (S) ID = 20 A Common source Tc = 25°C Pulse Test VGS = 4 V 4.5 5.5 8 6 5.75 5.25 Common source Tc = 25°C Pulse Test

Vth − Tc RDS (ON) − Tc 1.0 0.2 0.6 0.4 −40 −80 160 0 40 120 80 IDR − VDS PD − Tc 200 100 150 0 80 40 160 120 500 300 200 0 40 60 20 0.8 100 0.1 100 1000 1 10 10000 80 100 0.20 0.4 0.6 1.2 0.1 100 Common source Tc = 25°C Pulse Test VGS = 0 V 1 0.8 1.0 −80 0 40 80 120 160−40

5 Common source

VDS = 10 V ID = 1mA Pulse Test 200 Case temperature Tc (°C) Gate threshold voltage Vth (V) Case temperature Tc (°C) Total gate charge Q g (nC) Capacitance C (pF) Capacitance – VDS Drain-source voltage V DS (V) Drain-source ON resistance RDS (ON) ( Ω) Case temperature Tc (°C) Drain reverse current I DR (A) Drain-source voltage V DS (V) Drain power dissipation PD (W) Drain-source voltage V DS (V) Dynamic input / output characteristics Gate-source voltage V GS (V) VDD = 100V 200V 400V VDS VGS Common source ID = 20 A Ta = 25°C Pulse Test ID = 20A Common source VGS = 10 V Pulse Test 400 100 4 120 Ciss Coss Crss 1.4 Common source VGS = 0 V f = 1 MHz Tc = 25°C

−15 V 15 V Test circuit Wave form IAR BVDSS VDD V DS RG = 25 Ω VDD = 90 V, L = 4.08 mH ⎟⎟ −⋅ ⋅ ⋅ = VDDBVDSS BVDSS2I L2 1ΕAS 1000 1 10 100 0.1 100 0.01 1000 EAS – Tch 800 600 400 200 25 50 75 100 125 150 1000 SAFE OPERATING AREA Drain-source voltage V DS (V) Drain current I D (A) Channel temperature (initial) T ch (°C) Avalanche energy E AS ( m J ) ※ Single pulse Ta=25℃ Curves must be derated linearly with increase in temperature. ID max (pulse) * ID max (continuous) DC OPEATION Tc = 25°C 100 μs * 1 ms * VDSS max

RESTRICTIONS ON PRODUCT USE 20070701-EN

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
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