K4108

K4108 THINKISEMI | Alldatasheet

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Technical content

Features

※ Uninterruptible Power Supply(UPS) LCD Panel Power ※ DC-AC Inverter,Amplifier and SMPS Mechanical Data ※ Case:TO-3P non-isolated package ※ Terminals: Solderable p er MIL-STD-202 method 208 ※ Polarit y : As per configuration ※ Mountin g p osition: An y ※ Wei g ht: 6.0 g ram a pp roximatel y Epoxy: UL 94V-0 rate flame retardant Schematic Diagram Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve ESD Capability Improved 100% Avalanche Tested Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage V DSS 500 V Drain−gate voltage (R GS = 20 kΩ) V DGR 500 V Gate−source voltage V GSS ±30 V DC (Note 1) I D 20 A Drain current Pulse (Note 1) I DP 80 A Drain power dissipation (Tc = 25°C) P D 150 W Single-pulse avalanche energy (Note 2) E AS 960 mJ Avalanche current I AR 20 A Repetitive avalanche energy (Note 3) E AR 15 mJ Channel temperature T ch 150 °C Storage temperature range T stg −55~150 °C Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R th (ch−c) 0.833 °C / W Thermal resistance, channel to ambient R th (ch−a) 50 °C / W

http://www.thinkisemi.com.tw/ Page 2/6Rev.11T © 1995 Thinki Semiconductor Co., Ltd. K4108

Electrical Characteristics

(Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±25 V, V DS = 0 V — — ±10 μA Gate−source breakdown voltage V (BR) GSS I G = ±10 μA, V DS = 0 V ±30 — — V Drain cutoff current I DSS V DS = 500 V, V GS = 0 V — — 100 μA Drain−source breakdown voltage V (BR) DSS I D = 10 mA, V GS = 0 V 500 — — V Gate threshold voltage V th V DS = 10 V, I D = 1 mA 2.0 — 4.0 V Drain−source ON resistance R DS (ON) V GS = 10 V, I D = 10 A — 0.21 0.27 Ω Forward transfer admittance |Y fs | V DS = 10 V, I D = 10 A 4.0 14 — S Input capacitance C iss — 3400 — Reverse transfer capacitance C rss — 25 — Output capacitance C oss V DS = 25 V, V GS = 0 V, f = 1 MHz — 320 — pF Rise time t r — 70 — Turn on time t on — 130 — Fall time t f — 70 — Switching time Turn off time t off — 280 — ns Total gate charge (gate−source plus gate−drain) Q g — 70 — Gate−source charge Q gs — 45 — Gate−drain (“Miller”) charge Q gd V DD ≈ 400 V, V GS = 10 V, I D = 20 A — 25 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) I DR — — — 20 A Pulse drain reverse current (Note 1) I DRP — — — 80 A Forward voltage (diode) V DSF I DR = 20 A, V GS = 0 V — — −1.7 V Reverse recovery time t rr — 1300 — ns Reverse recovery charge Q rr I DR = 20 A, V GS = 0 V dI DR / dt = 100 A / μs — 20 — μC R L = 20 Ω V DD ∼ − 200 V 0 V V GS 10 V 50 Ω I D = 10A Duty 1%, t w = 10 μs V OUT Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: V DD = 90 V, T ch = 25°C (initial), L = 4.08 mH, R G = 25 Ω, I AR = 20 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.

http://www.thinkisemi.com.tw/ Page 3/6Rev.11T © 1995 Thinki Semiconductor Co., Ltd. VGS = 4V 4.5 5.25 5.5 Common source Tc = 25°C Pulse Test I D – V DS I D – V DS I D – V GS V DS – V GS 20 30 40 50 01 0 8 12 16 20 2 3 4 50 1 4 8 0 2 106 Common source VDS = 20 V Pulse Test Tc = −55°C 100 fs | – I D 10 100 100 Common source VDS = 20 V Pulse Test Tc = −55°C 100 R DS (ON) – I D 11 0 1 00 0.1 1.0 Common source Tc = 25°C VGS = 10 V Pulse Test Drain-source voltage V DS ( V ) Drain current I D ( A ) Drain-source voltage V DS ( V ) Drain current I D ( A ) Gate-source voltage V GS ( V ) Drain current ID (A) Gate-source voltage V GS ( V ) Drain current I D (A) Drain current I D (A) Drain-source ON resistance RDS (ON) ( Ω) Drain-source voltage V DS (V) Forward transfer admittance ⎪Yfs⎪ (S) ID = 20 A Common source Tc = 25°C Pulse Test VGS = 4 V 4.5 5.5 5.75 5.25 Common source Tc = 25°C Pulse Test K4108

http://www.thinkisemi.com.tw/ Page 4/6Rev.11T © 1995 Thinki Semiconductor Co., Ltd. V th − Tc R DS (ON) − Tc 1.0 0.2 0.6 0.4 −40 −80 160 0 40 120 80 I DR − V DS P D − Tc 200 100 150 0 80 40 160 120 500 300 200 0 40 60 20 0.8 100 0.1 100 1000 1 10 10000 80 100 0.20 0.4 0.6 1.2 0.1 100 Common source Tc = 25°C Pulse Test V GS = 0 V 0.8 1.0 −80 0 40 80 120 160−40 Common source VDS = 10 V ID = 1mA Pulse Test 200 Case temperature Tc (°C) Gate threshold voltage Vth (V) Case temperature Tc (°C) Total gate charge Q g (nC) Capacitance C (pF) Capacitance – V DS Drain-source voltage V DS (V) Drain-source ON resistance RDS (ON) ( Ω) Case temperature Tc (°C) Drain reverse current I DR (A) Drain-source voltage V DS (V) Drain power dissipation PD (W) Drain-source voltage V DS (V) Dynamic input / output characteristics Gate-source voltage V GS (V) VDD = 100V 200V V VDS VGS Common source ID = 20 A Ta = 25°C Pulse Test ID = 20A Common source VGS = 10 V Pulse Test 400 100 4 120 Ciss Coss Crss 1.4 Common source VGS = 0 V f = 1 MHz Tc = 25°C K4108

http://www.thinkisemi.com.tw/ Page 5/6Rev.11T © 1995 Thinki Semiconductor Co., Ltd. −15 V 15 V Test circuit Wave form I AR B VDSS V DD V DS R G = 25 Ω V DD = 90 V, L = 4.08 mH −⋅ ⋅ ⋅ = VDDBVDSS BVDSS2I L2 1ΕAS 1000 1 10 100 0.1 100 0.01 1000 E AS – T ch 800 600 400 200 25 50 75 100 125 150 1000 SAFE OPERATING AREA Drain-source voltage V DS (V) Drain current I D (A) Channel temperature (initial) T ch (°C) Avalanche energy E AS ( m J ) ※ Single pulse Ta=25℃ Curves must be derated linearly with increase in temperature. ID max (pulse) * ID max (continuous) DC OPEATION Tc = 25°C 100 μs * 1 ms * VDSS max K4108

15.60 ±0.20 4.80 ±0.20 13.60 ±0.20 9.60 ±0.20 2.00 ±0.20 3.00 ±0.20 1.00 ±0.20 1.40 ±0.20 ø3.20 ±0.10 3.80 ±0.20 13.90 ±0.20 3.50 ±0.20 16.50 ±0.30 12.76 ±0.20 19.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.50 +0.15 –0.05 0.60 +0.15 –0.05 5.45TYP [5.45 ±0.30 5.45TYP [5.45 ±0.30 TO-3PN-SQ/TO-3PB-SQ http://www.thinkisemi.com.tw/ Page 6/6Rev.11T © 1995 Thinki Semiconductor Co., Ltd. K4108