K4107

K4107 THINKISEMI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

Features

※ Uninterruptible Power Supply(UPS) LCD Panel Power ※ DC-AC Inverter,Amplifier and SMPS Mechanical Data ※ Case:TO-3P non-isolated package ※ Terminals: Solderable p er MIL-STD-202 method 208 ※ Polarit y : As per configuration ※ Mountin g p osition: An y ※ Wei g ht: 6.0 g ram a pp roximatel y Epoxy: UL 94V-0 rate flame retardant Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage V DSS 500 V Drain−gate voltage (R GS = 20 kΩ) V DGR 500 V Gate−source voltage V GSS ±30 V DC (Note 1) I D 15 A Drain current Pulse (Note 1) I DP 60 A Drain power dissipation (Tc = 25°C) P D 150 W Single-pulse avalanche energy (Note 2) E AS 765 mJ Avalanche current I AR 15 A Repetitive avalanche energy (Note 3) E AR 15 mJ Channel temperature T ch 150 °C Storage temperature range T stg −55~150 °C Schematic Diagram Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve ESD Capability Improved 100% Avalanche Tested

Electrical Characteristics

(Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±25 V, V DS = 0 V — — ±10 μA Gate−source breakdown voltage V (BR) GSS I G = ±10 μA, V DS = 0 V ±30 — — V Drain cutoff current I DSS V DS = 500 V, V GS = 0 V — — 100 μA Drain−source breakdown voltage V (BR) DSS I D = 10 mA, V GS = 0 V 500 — — V Gate threshold voltage V th V DS = 10 V, I D = 1 mA 2.0 — 4.0 V Drain−source ON resistance R DS (ON) V GS = 10 V, I D = 7.0 A — 0.33 0.4 Ω Forward transfer admittance |Y fs | V DS = 10 V, I D Input capacitance C iss — 2450 — Reverse transfer capacitance C rss — 15 — Output capacitance C oss V DS = 25 V, V GS = 0 V, f = 1 MHz — 220 — pF Rise time t r — 50 — Turn-on time t on — 90 — Fall time t f — 45 — Switching time Turn-off time t off — 175 — ns Total gate charge (gate−source plus gate−drain) Q g — 48 — Gate−source charge Q gs — 26 — Gate−drain (“Miller”) charge Q gd V DD ≈ 400 V, V GS = 10 V, I D = 15 A — 22 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) I DR — — — 15 A Pulse drain reverse current (Note 1) I DRP — — — 60 A Forward voltage (diode) V DSF I DR = 15 A, V GS = 0 V — — −1.7 V Reverse recovery time t rr — 1050 — ns Reverse recovery charge Q rr I DR = 15 A, V GS = 0 V dI DR / dt = 100 A / μs — 13 — μC Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R th (ch−c) 0.833 °C/W Thermal resistance, channel to ambient R th (ch−a) 50 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: V DD = 90 V, T ch = 25°C (initial), L = 5.78 mH, R G = 25 Ω, I AR = 15 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. http://www.thinkisemi.com.tw/ Page 2/6Rev.11T © 1995 Thinki Semiconductor Co., Ltd. K4107

http://www.thinkisemi.com.tw/ Page 3/6Rev.11T I D – V DS Drain current I D (A) Drain−source voltage V DS (V) 0 1 5 2 3 4 VGS = 4 V Common source Tc = 25°C Pulse test I D – V DS Drain current I D (A) Drain−source voltage V DS (V) 100 5020 30 40 Common source Tc = 25°C Pulse test I D – V GS Drain current I D (A) Gate−source voltage V GS ( V ) 2 0 106 8 100 Tc = −55°C Common source VDS = 20 V Pulse test V DS – V GS Drain−source voltage V DS (V) Gate−source voltage V GS ( V ) 40 208 12 16 ID = 4 A Common source Tc = 25°C Pulse test fs ⎪ − I D Forward transfer admittance ⎪Y fs ⎪ (S) Drain current I D (A) 100 1 100 10 Common source VDS = 20 V Pulse test Tc = −55°C 100 R DS (ON) − I D Drain−source ON resistance R DS (ON) ( Ω) Drain current I D (A) 0.1 0.1 100 VGS = 10 V Common source Tc = 25°C Pulse test 4.5 4.75 5.25 5.5 5.75 5.25 4.75 4.5 VGS = 4 V © 1995 Thinki Semiconductor Co., Ltd. K4107

http://www.thinkisemi.com.tw/ Page 4/6Rev.11T ID = 15 A VGS = 0, −1 V Ciss Coss Crss Common source VGS = 0 V f = 1 MHz Tc = 25°C Gate threshold voltage V th (V) Drain−source voltage V DS (V) I DR − V DS Drain reverse current I DR (A) Drain−source voltage V DS (V) Capacitance – V DS Capacitance C (pF) Case temperature Tc (°C) V th − Tc Common source VGS = 10 V Pulse test Common source VDS = 10 V ID = 1 mA Pulse test Common source Tc = 25°C Pulse test R DS (ON) – Tc Drain−source ON resistance R DS (ON) ( Ω) Case temperature Tc (°C) 1.0 0.2 0.6 0.4 0.8 −80 −40 1600 80 120 40 0.1 100 10000 100 1000 0.1 1 10010 −40−80 1600 80 120 40 Dynamic input/output characteristics VDS Drain−source voltage V DS (V) Gate−source voltage V GS (V) Total gate charge Q g (nC) Common source ID = 15 A Tc = 25°C Pulse test 200 VDS = 100 V 500 400 300 200 100 0 60 80 100 40 20 VGS 400 400 200 VDS = 100 V P D − Tc 200 100 150 0 80 40 160 120 200 Case temperature Tc (°C) Drain power dissipation P D (W) © 1995 Thinki Semiconductor Co., Ltd. K4107

http://www.thinkisemi.com.tw/ Page 5/6Rev.11T −15 V 15 V Test circuit Waveform I AR B VDSS V DD V DS R G = 25 Ω V DD = 90 V, L = 5.78 mH −⋅ ⋅ ⋅ = VDDBVDSS BVDSS2I L2 1ΕAS 1 10 100 0.1 100 0.01 1000 E AS – T ch 800 600 400 200 25 50 75 100 125 150 1000 VDSS max 1000 SAFE OPERATING AREA Drain-source voltage V DS (V) Drain current I D (A) Channel temperature (initial) T ch (°C) Avalanche energy E AS ( m J ) ID max (pulse) * ID max (continuous) DC OPERATION Tc = 25°C 100 μs * 1 ms * * Single pulse Ta = 25℃ Curves must be derated linearly with increase in temperature. © 1995 Thinki Semiconductor Co., Ltd. K4107

15.60 ±0.20 4.80 ±0.20 13.60 ±0.20 9.60 ±0.20 2.00 ±0.20 3.00 ±0.20 1.00 ±0.20 1.40 ±0.20 ø3.20 ±0.10 3.80 ±0.20 13.90 ±0.20 3.50 ±0.20 16.50 ±0.30 12.76 ±0.20 19.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.50 +0.15 –0.05 0.60 +0.15 –0.05 5.45TYP [5.45 ±0.30 5.45TYP [5.45 ±0.30 TO-3PN-SQ/TO-3PB-SQ http://www.thinkisemi.com.tw/ Page 6/6Rev.11T © 1995 Thinki Semiconductor Co., Ltd. K4107