IKP40N65H5_15 INFINEON | Alldatasheet

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Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IKP40N65H5,IKW40N65H5 650VDuoPackIGBTanddiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl

IKP40N65H5,IKW40N65H5 Highspeedswitchingseriesfifthgeneration Rev.2.1,2015-05-06 Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode FeaturesandBenefits: HighspeedH5technologyoffering

  • Best-in-Classefficiencyinhardswitchingandresonant topologies
  • PlugandplayreplacementofpreviousgenerationIGBTs
  • 650Vbreakdownvoltage
  • LowgatechargeQG
  • IGBTcopackedwithRAPID1fastandsoftantiparalleldiode
  • Maximumjunctiontemperature175°C
  • QualifiedaccordingtoJEDECfortargetapplications
  • Pb-freeleadplating;RoHScompliant
  • CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ Applications:
  • Solarconverters
  • Uninterruptiblepowersupplies
  • Weldingconverters
  • Midtohighrangeswitchingfrequencyconverters Packagepindefinition:
  • Pin1-gate
  • Pin2&backside-collector
  • Pin3-emitter G C E 1 2 3 KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package IKP40N65H5 650V 40A 1.65V 175°C K40EH5 PG-TO220-3 IKW40N65H5 650V 40A 1.65V 175°C K40EH5 PG-TO247-3

IKP40N65H5,IKW40N65H5 Highspeedswitchingseriesfifthgeneration Rev.2.1,2015-05-06 TableofContents

IKP40N65H5,IKW40N65H5 Highspeedswitchingseriesfifthgeneration Rev.2.1,2015-05-06 MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 650 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 74.0 46.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 120.0 A Turn off safe operating area VCE≤650V,Tvj≤175°C,tp=1µs - 120.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 36.0 21.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 120.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±30 V PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 250.0 125.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s PG-TO220-3 PG-TO247-3 260 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Symbol Conditions Max.Value Unit Characteristic IGBT thermal resistance, junction - case Rth(j-c) 0.60 K/W Diode thermal resistance, junction - case Rth(j-c) 1.80 K/W Thermal resistance junction - ambient Rth(j-a) PG-TO220-3 PG-TO247-3

40 K/W

IKP40N65H5,IKW40N65H5 Highspeedswitchingseriesfifthgeneration Rev.2.1,2015-05-06 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=40.0A Tvj=25°C Tvj=125°C Tvj=175°C 1.65 1.85 1.95 2.10 V Diode forward voltage VF VGE=0V,IF=20.0A Tvj=25°C Tvj=125°C Tvj=175°C 1.45 1.40 1.40 1.80 V Gate-emitter threshold voltage VGE(th) IC=0.40mA,VCE=VGE 3.2 4.0 4.8 V Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=175°C 40.0 4000.0 µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=40.0A - 50.0 - S ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit DynamicCharacteristic Input capacitance Cies - 2500 - Output capacitance Coes - 50 - Reverse transfer capacitance Cres - 9 - VCE=25V,VGE=0V,f=1MHz pF Gate charge QG VCC=520V,IC=40.0A, VGE=15V - 95.0 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE PG-TO220-3 PG-TO247-3 - 7.0 13.0 - nH SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) - 22 - ns Rise time tr - 12 - ns Turn-off delay time td(off) - 165 - ns Fall time tf - 13 - ns Turn-on energy Eon - 0.39 - mJ Turn-off energy Eoff - 0.12 - mJ Total switching energy Ets - 0.51 - mJ Tvj=25°C, VCC=400V,IC=20.0A, VGE=0.0/15.0V, RG(on)=15.0Ω ,RG(off)=15.0Ω , Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery.

IKP40N65H5,IKW40N65H5 Highspeedswitchingseriesfifthgeneration Rev.2.1,2015-05-06 Turn-on delay time td(on) - 19 - ns Rise time tr - 4 - ns Turn-off delay time td(off) - 190 - ns Fall time tf - 24 - ns Turn-on energy Eon - 0.09 - mJ Turn-off energy Eoff - 0.05 - mJ Total switching energy Ets - 0.14 - mJ Tvj=25°C, VCC=400V,IC=5.0A, VGE=0.0/15.0V, RG(on)=15.0Ω ,RG(off)=15.0Ω , Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr - 62 - ns Diode reverse recovery charge Qrr - 0.45 - µC Diode peak reverse recovery current Irrm - 12.5 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -290 - A/µs Tvj=25°C, VR=400V, IF=20.0A, diF/dt=1000A/µs Diode reverse recovery time trr - 30 - ns Diode reverse recovery charge Qrr - 0.22 - µC Diode peak reverse recovery current Irrm - 10.7 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -700 - A/µs Tvj=25°C, VR=400V, IF=5.0A, diF/dt=1000A/µs SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) - 20 - ns Rise time tr - 12 - ns Turn-off delay time td(off) - 195 - ns Fall time tf - 22 - ns Turn-on energy Eon - 0.54 - mJ Turn-off energy Eoff - 0.22 - mJ Total switching energy Ets - 0.76 - mJ Tvj=150°C, VCC=400V,IC=20.0A, VGE=0.0/15.0V, RG(on)=15.0Ω ,RG(off)=15.0Ω , Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Turn-on delay time td(on) - 19 - ns Rise time tr - 5 - ns Turn-off delay time td(off) - 240 - ns Fall time tf - 33 - ns Turn-on energy Eon - 0.15 - mJ Turn-off energy Eoff - 0.07 - mJ Total switching energy Ets - 0.22 - mJ Tvj=150°C, VCC=400V,IC=5.0A, VGE=0.0/15.0V, RG(on)=15.0Ω ,RG(off)=15.0Ω , Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery.

IKP40N65H5,IKW40N65H5 Highspeedswitchingseriesfifthgeneration Rev.2.1,2015-05-06 DiodeCharacteristic,atTvj=150°C Diode reverse recovery time trr - 90 - ns Diode reverse recovery charge Qrr - 1.00 - µC Diode peak reverse recovery current Irrm - 17.5 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -220 - A/µs Tvj=150°C, VR=400V, IF=20.0A, diF/dt=1000A/µs Diode reverse recovery time trr - 52 - ns Diode reverse recovery charge Qrr - 0.49 - µC Diode peak reverse recovery current Irrm - 15.0 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -430 - A/µs Tvj=150°C, VR=400V, IF=5.0A, diF/dt=1000A/µs

Figure 25. Typicaldiodeforwardvoltageasafunction

IKP40N65H5,IKW40N65H5 Highspeedswitchingseriesfifthgeneration Rev.2.1,2015-05-06

IKP40N65H5,IKW40N65H5 Highspeedswitchingseriesfifthgeneration Rev.2.1,2015-05-06

IKP40N65H5,IKW40N65H5 Highspeedswitchingseriesfifthgeneration Rev.2.1,2015-05-06 t a b td(off) tf trtd(on) 90% IC 10% IC 90% IC 10% VGE 10% IC t 90% VGE t t 90% VGE VGE(t) t t tt1 t4 2% IC 10% VGE 2% VCE t2 t3 E t t V I toff = x x d CE C E t t V I ton = x x d CE C CC dI /dtF dI I,V Figure A. Figure B. Figure C. Definition of diode switching characteristics Figure E. Dynamic test circuit Figure D. I (t)C Parasitic inductance L , parasitic capacitor C , relief capacitor C , (only for ZVT switching) s s r t t t Q Q Q rr a b rr a b = + = + Q a Qb V (t)CE VGE(t) I (t)C V (t)CE T esting Conditions

IKP40N65H5,IKW40N65H5 Highspeedswitchingseriesfifthgeneration Rev.2.1,2015-05-06 RevisionHistory IKP40N65H5, IKW40N65H5 Revision:2015-05-06,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2012-11-09 Preliminary data sheet 1.2 2013-12-18 New Marking Pattern 2.1 2015-05-06 Final data sheet WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered.