K4067-TL-E VBSEMI | Alldatasheet
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Technical content
N-Channel 30-V (D-S) MOSFET
FEATURES
- TrenchFET ® Power MOSFET 100 % R g and UIS Tested Compliant to RoHS Directive 2011/65/EU
APPLICATIONS
OR-ing Server D C / D C Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 sec. d. Maximum under steady state conditions is 90 °C/W. e. Calculated based on maximum junction temperature. Package limitation current is 90 A. PRODUCT SUMMARY RDS(on) (VDS (V) ) ID (A)a, e Qg (Typ) 0.007 at VGS = 10 V 25 nC0.009 at VGS = 4.5 V ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit VDrain-Source Voltage DS 30 VVGate-Source Voltage GS ± 20 TC Continuous Drain Current (TJ = 175 °C) = 25 °C ID TC A = 70 °C TA = 25 °C TA = 70 °C IPulsed Drain Current DM 200 Avalanche Current Pulse 3I L = 0.1 mH AS 9 9ESingle Pulse Avalanche Energy AS 4.8 mJ TC Continuous Source-Drain Diode Current = 25 °C 50IS a, e A 3.13TA = 25 °C b, c TC Maximum Power Dissipation = 25 °C 100 PD a TC W = 70 °C 75 3.25TA = 25 °C b, c 2.33TA = 70 °C b, c TJ, TOperating Junction and Storage Temperature Range stg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit t Maximum Junction-to-Ambientb, d 10 sec RthJA 32 40 °C/W Maximum Junction-to-Case RSteady State thJC 0.5 0.6 21.8b, c D G S N-Channel MOSFET K4067-TL-E-VB www.VBsemi.com 18b, c TO-252 SGD g Top View K4067-TL-E-VB Datasheet
Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static VDrain-Source Breakdown Voltage DS VGS = 0 V, ID = 250 µA 30 V VDS/TVDS Temperature Coefficient J ID = 250 µA 35 mV/°CVGS(th)/TVGS(th) Temperature Coefficient J - 7.5 VDS = VGS, IDVGate-Source Threshold Voltage GS(th) = 250 µA 1.5 2.0 V VDS = 0 V, VGS = ± 20IGate-Source Leakage GSS V ± 100 nA VDS = 30 V, VGS IZero Gate Voltage Drain Current DSS = 0 V 1 µAVDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta VDS 5 V, VGS = 10ID(on) V 90 A Drain-Source On-State Resistancea VGS = 10 V, ID = 2 RDS(on) 1.8 A 0.007 VGS = 4.5 V, ID = 18A Forward Transconductancea VDS = 15 V, ID = 2gfs 1.8 A 160 S Dynamicb CInput Capacitance iss VDS = 15 V, VGS = 0 V, f = 1 MHz 2201 C pFOutput Capacitance oss 525 CReverse Transfer Capacitance rss 370 VDS = 15 V, VGS = 10 V, ID = 2QTotal Gate Charge g
1.8 A 35 45
nCVDS = 15 V, VGS = 4.5 V, ID = 21.8 A 25 35 QGate-Source Charge gs 15 QGate-Drain Charge gd 20 RGate Resistance g f = 1 MHz 1.4 2.1 tTur n-On Delay Time d(on) VDD = 15 V, RL = 0.625 ID 24 A, VGEN = 10 V, Rg = 1 18 27 t ns Rise Time r 11 17 tTurn-Off Delay Time d(off) 70 105 tFall Time f 10 15 tTurn-On Delay Time d(on) VDD = 15 V, RL = 0.67 ID 22.5 A, VGEN = 4.5 V, Rg = 1 55 83 tRise Time r 180 270 tTurn-Off Delay Time d(off) 55 83 tFall Time f 12 18 Drain-Source Body Diode Characteristics TCIContinuous Source-Drain Diode Current S = 25 °C 120 A Pulse Diode Forward Currenta ISM 120 IS = 22VBody Diode Voltage SD A 0.8 1.2 V tBody Diode Reverse Recovery Time rr IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 52 78 ns QBody Diode Reverse Recovery Charge rr 70.2 105 nC tReverse Recovery Fall Time a 27 nstReverse Recovery Rise Time b 25 www.VBsemi.com g 0.009 K4067-TL-E-VB
TYPICAL CHARACTERISTICS (25 ° C, unless otherwise noted) Output Characteristics Transconductance Capacitance VGS = 10 V thru 4 V u ( t n e r rA VDS - Drain-to-Source Voltage (V) )C n i a r D - ID = 2 VGS V VGS = 3 V 100 200 300 400 500 600 0 1 02 03 04 05 06 07 0 809 0 u e c n a t cS ()d n o c s n a r T - Gfs ID - Drain Current (A) T C = - 55 °C T C = 25 °C T C = 125 °C 000 500 000 500 0 6 12 18 24 30 p ( e c n a t i c a p a C - CF VDS - Drain-to-Source Voltage (V) C iss C oss Transfer Ch C rss aracteristics Gate Charge 0.0 0.6 1.2 2.4 3.0 012 34 VGS - Gate-to-Source Voltage (V) u ( t n e r rA)C n i a r D - ID T C = 25 °C T C = - 55 °C T C = 125 °C 0.0 0.00 0 1 53 04 56 07 59 0 RDS(on) n a t s i s e R - n O –ce (Ω ID - Drain Current (A) RDS(on) vs. Drain Current VGS = 4.5 VGS = 10 V V 306 090 0 1 5 0 1 812 0 0 VGS o S - o t - e t a G -u e c rV e g a t l o(V Qg - Total Gate Charge (nC) I D = 21.8 A VDS = 15 VDS = 24 V V K4067-TL-E-VB www.VBsemi.com 0.030 0.025 0.020 0.015 0.010 g 500
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) On-Resistance vs. Junction Temperature RDS(on) vs. VGS vs. Temperature 0.2 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) VGS = 10 V, ID = 38.8 A R o ( S Dn) ) VGS = 4.5 V, ID e R - n O -sistance (N d e z i l a m r o = 27 A 0.000 0.001 0.002 0.003 0.004 0.005 0246 8 10 RDS(on) - n a t s i s e R - n O ce ( VGS - Gate-to-Source Voltage (V) I D = 38.8 A T A = 125 °C Forward T A = 25 °C Diode Voltage vs. Temperature Threshold Voltage 0.001 0.01 0.1 100 0 0.2 0.4 0.6 0. 8 1 u C e c ru ( t n e r rA)o S - I VSD - Source-to-Drain Voltage (V S T J = 25 °C T J = 150 °C 0.8 1.2 1.6 2.0 2.4 e c n a i r a(V)V Vt ( S Gh) - 50 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) I D = 250 µA Safe Operating Area, Junction-to-Ambient 100 0.001 0.01 0.1 1000 0.1 1 10 100 ID - Dr T A = 25 °C Single Pulse ain Current (A) dc 10 s 1 s 100 ms 10 ms *Limited by rDS (on) *VGS VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified K4067-TL-E-VB www.VBsemi.com g
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) *The power dissipation PD is ba sed on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 300 250 200 150 100 0 25 50 75 100 125 150 175 ID C n i a r D - u ( t n e r rA) TC - Case Temperature (°C) Package Limited Power Derating 300 250 200 150 100 0 25 50 75 100 125 150 175 TC - Case Temperatu o Pw n o i t a p i s s i D r e(W) re (°C) Normalized Thermal Transient Impedance, Junction-to-Case Square Wave Pulse Duration (sec) 0.1 0.01 10-4 10-3 10-2 10-1 Normalized Eff ective Transient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 Single Pulse 0.05 0.02 K4067-TL-E-VB www.VBsemi.com g
www.VBsemi.com TO-252AA CASE OUTLINE Note
- Dimension L3 is for reference only. L3D b b2 C gage plane height (0.5 mm) e E A L H INMILLIMETERS CHES A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 g
www.VBsemi.com RECO MMENDED MINIMUM PADS FOR DPAK (TO-252) 0.420 (10.668) 0.224 Recommended Minimum Pads Dimensions in Inches/(mm) (5.690) g 0.180 (4.572) 0.055 (1.397) 0.090 0.087 0.243
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