K401 KODENSHI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

The K401 has one channel in a 4-pin mini-flat SMD package. The K402 has two channels in a 8-pin mini-flat SMD package. The K404 has four channels in a 16-pin mini-flat SMD package.

FEATURES

  • Mini-flat Package
  • Collector-Emitter Voltage : Min.30V
  • Current Transfer Ratio : Type 600% (at IF=A1mA, VCE=2V)
  • Electrical Isolation Voltage : AC3750Vrms

APPLICATIONS

  • AC Signal Input
  • Automatic Vending Machine
  • Copiers, Industrial Robots K401 • K402 • K404 These Photocouplers consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Photo Darlington transistor per a channel.
  • Interface between two circuits of different potential DIMENSION (Unit : mm) K401 K402 K404 Orientation Mark 4.4 0.2 2.54 0.25 3.6 0.2 0.4 0.1 0.1 0.1 2.5 0.2 5.2 0.2 7.0 0.5 0.4Min. 0.15 0.05 4.4 0.22.5 0.2 8.7 0.2 Orientation Mark 0.15 0.05 0.4Min. 7.0 0.5 5.2 0.2 2.54 2.54 4.4 0.2 18.8 0.2 Orientation Mark 5.2 0.2 7.0 0.5 0.4Min. 2.5 0.2 0.1 0.12.54 2.54 0.15 0.05 1 2 4 3 8 6 57 2 3 41 15 13 11 91416 12 10 432 65 7 8

MAXIMUM RATINGS (Ta=25¡É ) *1. Input current with 100µs pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec ELECTRO-OPTICAL CHARACTERISTICS IF= ¡¾10mA V=0, f=1kHz IC=0.5mA IE=0.1mA IF=0, VCE=10V VCE=0, f=1KHz IF= ¡¾1mA, VCE=2V IF= ¡¾1mA, IC=2mA V=0, f=1KHz VCE=10V, RL=100 IC=10mA *4. CTR=(IC/IF) X 100 (%) Power Dissipation PD 70 mW - §Á Coupled Input-Output Capacitance - - - §Á Fall Time tf Parameter Symbol Rating ¡¾1 Collector Current Unit Input Forward Current IF Peak Forward Current*1 IFP Junction temperature TJ ¡¾50 mA A 125 ¡É Output Collector-Emitter Breakdown Voltage BVCEO 30 Emitter-Collector Breakdown Voltage BVECO 5 IC 50 V V mA Collector Power Dissipation PC 150 mW Input to Output Isolation Voltage*2 Viso AC3750 Vrms Storage Temperature Tstg -55~+125 ¡É Operating Temperature Topr -30~+85 ¡É Collector Dark Current Input-Output Isolation Resistance Total Power Dissipation Ptot 250 mW Capacitance Current Transfer Ratio*4 Collector-Emitter Saturation Voltage Input Output Forward Voltage Capacitance Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage tr IO 0.8 1011 CIO RH=40~60%, V=500V Max. 1.30 100 pF 1.2 - §Ù 90- pF T sol 260 ¡É Unit. pF Symbol VF V V nA Typ. 1.15 V K401 • K402 • K404 Parameter Lead Soldering Temperature*3 10- - 120 C T BVCEO CTR VCE(SAT) BVECO ICEO CCE Rise Time Condition 300 Min. (Ta=25 , unless otherwise noted)

K401 • K402 • K404 Dark Current ICEO (uA) Ambient Temperature Ta (¡É ) 0.001 0.01 4020 0.1 8060 100 Dark Current vs. Ambient Temperature Output Input Test Circuit VIN R RL VO VCC Waveform 10% 90% Switching Time Test Circuit tr tf Collector Power Dissipation PC (mW) Collector Power Dissipation vs. Ambient Temperature 250 Ambient Temperature Ta (¡É ) 0-20 150 100 200 8060 100 VCE=10V -20 30Forward Current IF (mA) 0 20 40 60 10080 Forward Current vs. Ambient Temperature Ta=-55¡É Forward Voltage VF (V) 0.4 Forward Current IF (mA) 100 Ta=25¡É 0.8 1.2 Ta=70¡É Forward Current vs. Forward Voltage 1.6 Ta=25¡É Collector Current vs. Collector-Emitter Voltage Collector Current IC (mA) 108642 Collector-Emitter Voltage VCE (V) IF=1.5mA IF=1mA IF=2.5mA IF=2.0mA IF=3.0mA IF=3.5mA PC(max.) Collector Current vs. Forward Current 54321 Forward Current IF (mA) Collector Current IC (mA) Ta=25¡É VCE=2V Response Time tr, tf (us) 0.05 Load Resistance RL (§Ú) 0.20.1 0.5 1 2 VCE=10V IC=10mA Ta=25¡É 100 1000 5000 Response Time vs. Load Resistance tr tf